DTD743EE Datasheet PDF - ROHM Semiconductor
| Part Number | DTD743EE | |
| Description | Digital transistors | |
| Manufacturers | ROHM Semiconductor | |
| Logo |  |
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Transistors
DTD743EE / DTD743EM
200mA / 30V Low VCE (sat) Digital transistors
(with built-in resistors)
DTD743EE / DTD743EM
zApplications
Inverter, Interface, Driver
zFeature
1) VCE (sat) is lower than the conventional products.
2) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
4) Only the on / off conditions need to be set for
operation, making the device design easy.
zStructure
NPN epitaxial plannar silicon transistor
(Resistor built-in type)
zExternal dimensions (Unit : mm)
DTD743EE
1.6
0.3
(3)
0.7
0.55
(2) (1)
0.2 0.2
0.5 0.5
EMT3
1.0
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
0.15 (1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : M23
DTD743EM
VMT3
1.2
0.32
(3)
0.22
(1)(2)
0.4 0.4
0.8
0.13
0.5
(1) IN
(2) GND
(3) OUT
Each lead has same dimensions
Abbreviated symbol : M23
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Supply voltage
VCC
Input voltage
Collector current
∗1
VIN
IC (max)
Power dissipation ∗2
PD
Junction temperature
Tj
Storage temperature
Tstg
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
Limits
DTD743EE DTD743EM
30
−10 to +20
200
150
150
−55 to +150
Unit
V
V
mA
mW
C
C
zPackaging specifications
Package
Packaging type
Code
EMT3
Taping
TL
Part No.
Basic ordering
unit (pieces)
3000
DTD743EE
DTD743EM
−
VMT3
Taping
T2L
8000
−
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ.
Input voltage
VI(off)
VI(on)
−
2.5
−
−
Output voltage
VO(on)
−
70
Input current
II − −
Output current
IO(off)
−
−
DC current gain
Transition frequency ∗
GI 115 −
fT − 260
Input resistance
R1 3.29 4.7
Resistance ratio
R2/R1 0.8 1.0
∗ Characteristics of built-in transistor.
Max.
0.5
−
300
1.4
0.5
−
−
6.11
1.2
Unit
V
mV
mA
µA
−
MHz
kΩ
−
Conditions
VCC= 5V, IO= 100µA
VO= 0.3V, IO= 20mA
IO/II= 50mA / 2.5mA
VI= 5V
VCC= 30V, VI=0V
VO= 2V, IO= 100mA
VCE= 10V, IE= −5mA, f=100MHz
−
−
zEquivalent circuit
R1
IN
R2
OUT
GND
IN OUT
GND
R1=4.7kΩ / R2=4.7kΩ
1/1
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for DTD743EE electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ DTD743EE.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| DTD743EE | The function is Digital transistors. ROHM Semiconductor | |
| DTD743EM | The function is Digital transistors. ROHM Semiconductor | |
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