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EM562081 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 EM562081
기능 256K x 8 Low Power SRAM
제조업체 Etron Technology
로고 Etron Technology 로고 



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EM562081 데이터시트, 핀배열, 회로
EtronTech
Features
Single power supply voltage of 2.7V to 3.6V
Power down features using CE1# and CE2
Low operating current : 25mA(max. for 70 ns)
Maximum Standby current : 10µA at 3.6 V
Data retention supply voltage: 1.5V to 3.6V
Direct TTL compatibility for all input and output
Wide operating temperature range: -40°C to 85°C
Package type: 36-ball TFBGA, 6x8mm
EM562081
256K x 8 Low Power SRAM
Preliminary, Rev 1.0 7/2001
asserted low. There are three control inputs. CE1# and
CE2 are used to select the device and for data retention
control, and output enable (OE#) provides fast memory
access. Data byte control pin (LB#,UB#) provides lower
and upper byte access. This device is well suited to
various microprocessor system applications where high
speed, low power and battery backup are required. And,
with a guaranteed operating range from -40°C to 85°C,
the EM562081 can be used in environments exhibiting
extreme temperature conditions.
Ordering Information
Part Number
Speed IDDS2
EM562081BC-70 70 ns 10 µA
EM562081BC-85 85 ns 10 µA
Package
6x8 BGA
6x8 BGA
Pin Names
Symbol
A0 - A17
DQ0-DQ7
CE1#,CE2
OE#
WE#
GND
VDD
NC
Function
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Output Enable
Read/Write Control Input
Ground
Power Supply
No Connection
Pin Assignment
1. 36-Ball BGA (CSP), Top View
123456
A A0 A 1 CE 2 A 3 A 6 A 8
B
DQ4 A2 WE# A4
A7 DQ0
C DQ5
NC A5
DQ1
D GND
VDD
E VDD
GND
F DQ6
NC A1 7
DQ2
G
DQ 7 O E#
CE 1# A 1 6
A15
DQ3
H
A9
A1 0
A1 1
A12
A13
A14
Overview
The EM562081 is a 2,097,152-bit SRAM organized as
262,144 words by 8 bits. It is designed with advanced
CMOS technology. This Device operates from a single
2.7V to 3.6V power supply. Advanced circuit
technology provides both high speed and low power. It
is automatically placed in low-power mode when chip
enable (CE1#) is asserted high or (CE2) is
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C
TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.




EM562081 pdf, 반도체, 판매, 대치품
EtronTech
EM562081
DC Characteristics (Ta = -40° C to 85° C, VDD = 2.7V to 3.6V)
Parameter Symbol
Test Conditions
Min Typ* Max Unit
Input low current
IIL IIN = 0V to VDD
-1
Output low voltage VOL IOL = 2.1 mA
-
Output high
voltage
VOH IOH = -1.0 mA
2.2
Operating current
IDD1
IDD2
VDD = 3.6 V , CE1# = VIL and
CE2 = VIH and IOUT = 0mA
Other Input = VIH / VIL
Cycle time = min
Cycle time = 1µs
IDDS1 CE1# = VIH or CE2 = VIL
Standby current
Notes:
IDDS2** CE1# VDD – 0.2V or CE2 0.2V,
(Note)
* Typical value are measured at Ta = 25°C, and not 100% tested.
** In standby mode with CE1# VDD - 0.2V, these limits are assured for the condition
CE2 VDD - 0.2V or CE2 0.2V.
1 µA
0.4 V
− −V
10 25
mA
5
0.5 mA
1 10 µA
Capacitance (Ta = 25° C; f = 1 MHz)
Parameter
Symbol Min Typ Max Unit Test Conditions
Input capacitance CIN − − 10 pF
VIN = GND
Output capacitance COUT
10 pF
VOUT = GND
Notes: This parameter is periodically sampled and is not 100% tested.
Preliminary
4
Rev 1.0
July 2001

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EM562081 전자부품, 판매, 대치품
EtronTech
Write Cycle1
(WE# Controlled)(See Note 4)
A d d re s s
W E#
tA S
CE1 #
tW C
tW P
tC W
EM562081
tW R
CE2
DO UT
DIN
tW H Z
(S e e N o te 2 )
(S e e N o te 5 )
tC W
tD S
V A LID DA TA IN
t OW
(S e e N o te 3 )
tDH
(S e e N o te 5 )
Preliminary
7
Rev 1.0
July 2001

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전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

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부품번호상세설명 및 기능제조사
EM562081

256K x 8 Low Power SRAM

Etron Technology
Etron Technology

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