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EM562161 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 EM562161
기능 128K x 16 Low Power SRAM
제조업체 Etron Technology
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EM562161 데이터시트, 핀배열, 회로
EtronTech
EM562161
128K x 16 Low Power SRAM
Preliminary, Rev 1.0 07/2001
Features
Single power supply voltage of 2.7V to 3.6V
Power down features using CE1# and CE2
Low operating current : 30mA(max for 55 ns)
Maximum Standby current : 10µA at 3.6 V
Data retention supply voltage: 1.5V to 3.6V
Direct TTL compatibility for all input and output
Wide operating temperature range: -40°C to 85°C
Package type: 48-ball TFBGA, 6x8mm
Ordering Information
Part Number
EM562161BC-55
EM562161BC-70
Speed
55 ns
70 ns
IDDS2
10 µA
10 µA
Package
6x8 BGA
6x8 BGA
Pin Description
Symbol
A0 - A16
DQ0 - DQ15
CE1#, CE2
OE#
WE#
LB#, UB#
GND
VDD
NC
Function
Address Inputs
Data Inputs / Outputs
Chip Enable Inputs
Output Enable
Read / Write Control Input
Data Byte Control Inputs
Ground
Power Supply
No Connection
Overview
The EM562161 is a 2,097,152-bit SRAM organized as
131,072 words by 16 bits. It is designed with advanced
CMOS technology. This Device operates from a single
2.7V to 3.6V power supply. Advanced
circuit technology provides both high speed and low
power. It is automatically placed in low-power mode
when chip enable (CE1#) is asserted high or (CE2) is
asserted low. There are three control inputs. CE1# and
CE2 are used to select the device and for data
retention control, and output enable (OE#) provides
fast memory access. Data byte control pin (LB#,UB#)
provides lower and upper byte access. This device is
well suited to various microprocessor system
applications where high speed, low power and battery
backup are required. And, with a guaranteed operating
range from -40°C to 85°C, the EM562161 can be used
in environments exhibiting extreme temperature
conditions.
Pin Configuration
48-Ball BGA (CSP), Top View
12 34
A
LB #
O E#
A0
A1
56
A2 CE 2
B
DQ8
UB#
A3
A4 CE1 # DQ 0
C
DQ9 DQ10
A5
A6
DQ1
DQ2
D
GN D DQ 1 1
NC
A7
DQ3
VD D
E
VDD DQ12
NC
A 16
DQ4
GND
F
DQ1 4 DQ1 3 A 14
A 15
DQ5
DQ6
G
DQ 1 5
NC
A 12
A 13
WE#
DQ7
H
NC
A8
A9
A 10
A1 1
NC
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.




EM562161 pdf, 반도체, 판매, 대치품
EtronTech
EM562161
DC Characteristics (Ta = -40° C to 85° C, VDD = 2.7V to 3.6V)
Parameter Symbol
Test Conditions
Min Typ* Max Unit
Input low current
IIL IIN = 0V to VDD
-1
Output low voltage VOL IOL = 2.1 mA
-
Output high
voltage
VOH IOH = -1.0 mA
2.2
Operating current
IDD1
VDD = 3.6 V ,
CE1# = VIL and
CE2 = VIH and
Cycle time =
min
55 ns
70 ns
IDD2
IOUT = 0mA
Other Input = VIH / VIL
Cycle time = 1µs
IDDS1 CE1# = VIH or CE2 = VIL
Standby current
Notes:
IDDS2** CE1# VDD – 0.2V or CE2 0.2V,
(Note) or LB# = UB# VDD – 0.2V
* Typical value are measured at Ta = 25°C, and not 100% tested.
** In standby mode with CE1# VDD - 0.2V, these limits are assured for the condition
CE2 VDD - 0.2V or CE2 0.2V.
1 µA
0.4 V
− −V
15 30
10 25 mA
4
0.5 mA
1 10 µA
Capacitance (Ta = 25° C; f = 1 MHz)
Parameter
Symbol Min Typ Max Unit Test Conditions
Input capacitance CIN − − 10 pF
VIN = GND
Output capacitance COUT
10 pF
VOUT = GND
Notes: This parameter is periodically sampled and is not 100% tested.
Preliminary
4
Rev 1.0
July 2001

4페이지










EM562161 전자부품, 판매, 대치품
EtronTech
Write Cycle1
(WE# Controlled)(See Note 4)
A d d r es s
WE#
tAS
CE1#
tWC
tW P
tC W
EM562161
tW R
CE2
UB# , LB#
D OUT
D IN
tW H Z
( Se e No te 2 )
( Se e Not e 5 )
tC W
tBW
tOW
(S e e N ot e 3)
tDS
V A LI D D A TA I N
tD H
(S e e N ot e 5 )
Preliminary
7
Rev 1.0
July 2001

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부품번호상세설명 및 기능제조사
EM562161

128K x 16 Low Power SRAM

Etron Technology
Etron Technology

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