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EM565168 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 EM565168
기능 512K x 16 Pseudo SRAM
제조업체 Etron Technology
로고 Etron Technology 로고 



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EM565168 데이터시트, 핀배열, 회로
EtronTech
EM565168
512K x 16 Pseudo SRAM
Rev 1.0
Sep. 2003
Features
Pin Assignment 48-Ball BGA, Top View
Organized as 512K words by 16 bits
Fast Cycle Time : 55ns, 70ns
Standby Current : 100uA
Deep power-down Current : 10uA (Memory cell data invalid)
Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15)
Compatible with low power SRAM
Single Power Supply Voltage : 3.0V±0.3V
Package Type : 48-ball FBGA, 6x8mm
Lead Free Package available - EM565168BC-XXG,
(G : indicates Lead Free Package)
123456
A LB# OE# A0 A1 A2 CE2
B DQ8 UB# A3 A4 CE1# DQ0
C DQ9 DQ10 A5 A6 DQ1 DQ2
D VSS DQ11 A17 A7 DQ3 VCC
Pin Description
E VCC DQ12 NC A16 DQ4 VSS
Symbol
A0 – A18
DQ0 – DQ15
CE1#
CE2
OE#
W E#
LB#
UB#
VCC
VSS
Function
Address Inputs
Data Inputs/Outputs
Chip Enable
Deep Power Down
Output Enable
Write Control
Lower Byte Control
Upper Byte Control
Power Supply
Ground
F DQ14 DQ13 A14 A15 DQ5 DQ6
G DQ15 NC A12 A13 WE# DQ7
H
A18 A8
A9 A10 A11 NC
Ordering Information
Part Number
Speed
Package
EM565168BC-55/55G 55 ns 6x8 BGA; G: lead free
EM565168BC-70/70G 70 ns 6x8 BGA; G: lead free
Overview
The EM565168 is a 8M-bit Pseudo SRAM organized as 512K words by 16 bits. It is designed with advanced
CMOS technology specified RAM featuring low power static RAM compatible function and pin configuration.
This device operates from a single power supply. Advanced circuit technology provides both high speed and
low power. It is automatically placed in low-power mode when CE1# or both UB# and LB# are asserted high or
CE2 is asserted low. There are three control inputs. CE1# and CE2 are used to select the device, and output
enable (OE#) provides fast memory access. Data byte control pins (LB#,UB#) provide lower and upper byte
access. This device is well suited to various microprocessor system applications where high speed, low power
and battery backup are required. And, with a guaranteed wide operating range, the EM565168 can be used in
environments exhibiting extreme temperature conditions.
Pin Location
Symbol
A0
A1
A2
A3
A4
A5
A6
A7
Location
A3
A4
A5
B3
B4
C3
C4
D4
Symbol
A8
A9
A10
A11
A12
A13
A14
A15
Location
H2
H3
H4
H5
G3
G4
F3
F4
Symbol
A16
A17
A18
NC
NC
DQ0
DQ1
DQ2
Location
E4
D3
H1
G2
H6
B6
C5
C6
Symbol
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
Location
D5
E5
F5
F6
G6
B1
C1
C2
Symbol
DQ11
DQ12
DQ13
DQ14
DQ15
CE1#
CE2
OE#
Location
D2
E2
F2
F1
G1
B5
A6
A2
Symbol
WE#
LB#
UB#
VCC
VCC
GND
GND
NC
Location
G5
A1
B2
D6
E1
D1
E6
E3
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.




EM565168 pdf, 반도체, 판매, 대치품
EtronTech
EM565168
DC Characteristics
Symbol
Parameter
Test Conditions
ILI
ILO
ICC1
ICC2
ISB1
ISBD
VOL
Input Leakage
Current
VIN = VSS to VDD
Output Leakage
Current
VIO = VSS to VDD
CE1# = VIH, CE2 = VIL or
OE# = VIH or WE# = VIL
Operating Current @
Min Cycle Time
Cycle time = Min., 100%
duty, IIO = 0mA, CE1# =
VIL, CE2 = VIH, VIN =
VIH or VIL
55ns
70ns
Operating Current @
Max Cycle Time
(1µs)
Standby Current
(CMOS)
Cycle time = 1µs, 100% duty
IIO = 0mA, CE1# 0.2V,
CE2 VDD -0.2V, VIN 0.2V
or VIN VDD -0.2V
CE1# = VDD – 0.2V and
CE2 = VDD – 0.2V,
Other inputs = VSS ~ VCC
Deep Power Down
CE2 0.2V, Other inputs =
VSS ~ VCC
Output Low Voltage IOL = 2.1mA
VOH Output High Voltage IOH = -1.0mA
Min.
Max.
Unit
-1 1 µA
-1 1 µA
35
mA
25
3 mA
100 µA
10 µA
0.4 V
2.4
V
Capacitance (Ta = 25°C; f = 1 MHz)
Parameter
Symbol Min Typ Max Unit Test Conditions
Input capacitance
Output capacitance
CIN
COUT
8 pF
10 pF
VIN = GND
VOUT = GND
Notes: These parameters are sampled and not 100% tested.
4
Rev 1.0
Sep. 2003

4페이지










EM565168 전자부품, 판매, 대치품
EtronTech
EM565168
Timing Diagrams
Read Cycle 1 – Addressed Controlled1)
Address
Data Out
tOH
Previous Data Valid
tRC
tAA
tOH
Data Valid
Read Cycle 2 – CE1# Controlled2)
Address
CE1#
UB#, LB#
OE#
Data Out
High-Z
tRC
tAA
tCO
tLZ
tBA
tBLZ
tOE
tOH
tHZ
tBHZ
tOLZ
tOHZ
Data Valid
High-Z
Notes:
1. CE1# = OE# = VIL, CE2 = WE# = VIH, UB# or/and LB# = VIL
2. CE2 = WE# = VIH
7
Rev 1.0
Sep. 2003

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