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PDF DCX4710H Data sheet ( Hoja de datos )
| Número de pieza | DCX4710H | |
| Descripción | 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS | |
| Fabricantes | Diodes Incorporated | |
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DCX4710H
100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS
General Description
• DCX4710H is best suited for applications where the load
needs to be turned on and off using micro-controllers,
comparators or other control circuits, particularly at a point of
load. It features a discrete pre-biased PNP transistor which
can support continuous maximum current of 100 mA. It also
contains a pre-biased NPN transistor which can be used as a
control and can be biased using a higher supply. The
component devices can be used as a part of circuit or as
stand alone discrete devices.
Features
• Built in Biasing Resistors
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
4
5
6
3
2
1
SOT-563
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic. "Green Molding" Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Fig. 2
• Terminals: Finish - Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 7
• Ordering Information: See Page 7
• Weight: 0.005 grams (approximate)
Schematic and Pin Configuration
Reference
Q1
Q2
Device Type
PNP
NPN
R1 (NOM)
10KΩ
⎯
R2 (NOM)
47KΩ
⎯
R3 (NOM)
⎯
10KΩ
R4 (NOM)
⎯
10KΩ
Maximum Ratings: Total Device @TA = 25°C unless otherwise specified
Characteristic
Output Current
Power Dissipation (Note 3)
Power Derating Factor above 45°C
Junction Operation and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Note 3)
(Equivalent to one heated junction of PNP transistor) @ TA = 25°C
Symbol
Iout
Pd
Pder
Pd
RθJA
Value
100
150
1.43
-55 to +150
833
Unit
mA
mW
mW/°C
°C
°C/W
Notes:
1. No purposefully added lead.
2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; as per Diodes Inc. suggested pad layout document AP02001 on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
DS30871 Rev. 6 - 2
1 of 7
www.diodes.com
DCX4710H
© Diodes Incorporated
1 page  
TA = 125°C
TA = 25°C TA = 85°C
TA = -55°C
TA = 150°C
IC, OUTPUT CURRENT (mA)
Fig. 6 Input Voltage vs. Collector Current
Characteristics Curves of NPN Transistor (Q2) @Tamb = 25°C unless otherwise specified
VCE = 5V
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0.1 1 10 100 1000
IC, COLLECTOR CURRENT (mA)
Fig. 7 DC Current Gain vs. IC
0.1
0.09
0.08
lb = 1.5mA lb = 1.75mA
lb = 1.25mA
lb = 2mA
0.07
0.06
0.05
lb = 0.5mA
0.04
0.03
0.02
0.01
lb = 1mA
lb = 0.75mA
lb = 0.25mA
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VCE, COLLECTOR EMITTER VOLTAGE (V)
Fig. 8 VCE vs. IC
DS30871 Rev. 6 - 2
5 of 7
www.diodes.com
DCX4710H
© Diodes Incorporated
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DCX4710H.PDF ] | |
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