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EMC21L1004GN PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 EMC21L1004GN
기능 High Voltage - High Power GaN-HEMT Power Amplifier Module
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EMC21L1004GN 데이터시트, 핀배열, 회로
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Eudyna GaN-HEMT 10W EMC21L1004GN
Preliminary
FEATURES
High Voltage Operation : VDS=50V
High Voltage - High Power GaN-HEMT
Power Amplifier Module
High Gain: 28.5dB(typ.) at Pout=22dBm(Avg.)
Broad Frequency Range : 2110 to 2170MHz
Proven Reliability
Small and Low Cost Metal Base Package
DESCRIPTION
The EMC21L1004GN is a high-gain and wide-band 2-stage HIC
amplifier module with 50V operation.
This module is targeted for high voltage, low current operation in digitally
modulated base station. This product is ideally suited not only for W-
CDMA base station amplifiers but also other HPA while offering ease for
use.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25oC)
Item
Symbol
Rating
DC Input Voltage (Drain)
Vdd1,2
0 to +52
ryDC Input Voltage (Gate)
Vgg1,2
-7 to 0
Input Power
Pin +20
Storage Temperature
Tstg
-40 to +100
aOperating Case Temperature
Top
-20 to +85
inRECOMMENDED OPERATING CONDITION (Case Temperature Tc= 25oC)
Item
Symbol
Condition
limDC Input Voltage (Drain)
Vdd1,2
50
DC Input Voltage (Gate)
Vgg1,2
-3
Input Power
Pin <10
reELECTRICAL CHARACTERISTICS (Case Temperature Tc= 25oC)
PItem
Symbol
Condition
Limit
Min. Typ. Max.
Unit
V
V
dBm
oC
oC
Unit
V
V
dBm
Unit
Frequency
f - 2.11 - 2.17 GHz
Linear Gain
Gain Deviation
Input VSWR
DC Input Current
DC Input Current
3rd Order Intermodulation
Distortion Ratio
DC Input Current
GL
d-Ga
VSWRi
Idd(DC)
Igg(DC)
IM3
Idd
Vdd1,2=50V
Vgg1,2=-3.0V
Pin=-10dBm
Vdd1,2=50V
Vgg1,2=-3.0V
Without RF
Vdd1,2=50V
Vgg1,2=-3.0V
Pout=22dBm(Avg.)
(Note 1)
26.0 28.5 31.0
- 0.2 0.5
- 1.5:1 2.5:1
- 210 250
- 6.0 15.0
- -47.0 -45.0
- 200 250
Note 1 : IM3 and Idd test condition as follows:
IM3&Idd : f0=2.135GHz, f1=2.145GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch
67% clipping modulation(Peak/Avg.=8.5dB@0.01% probability(CCDF))
measured over 3.84MHz at f0-10MHz and f1+10MHz.
Note 2 : The RF parameters are measured with test fixture.
dB
dBp_p
-
mA
mA
dBc
mA
Edition 1.0
June 2005
1




EMC21L1004GN pdf, 반도체, 판매, 대치품
EMC21L1004GN
High Voltage - High Power GaN-HEMT
Power Amplifier Module
S-Parameters @ Vdd1,2=50V Vgg1,2=-3.0V f=1 to 3 GHz
Zl = Zs = 50 ohm
+25j
+10j
0
-10j
-25j
±180° 40
Scale for |S21|
+50j
10
+100j
Freq S11 S21 S12
[GHz] MAG ANG MAG ANG MAG ANG
1.00 0.963 103.7 0.033 129.4 0.001 -56.2
25Ω
1.10 0.953
1.20 0.946
78.4 0.053
53.2 0.090
96.8 0.001
63.2 0.001
-65.9
-98.3
50Ω
2.0GHz +250j
2.1
ry2.0GHz
2.2
2.1
2.2
-250j
a-100j
S11
in-50j S22
Prelim+90°
1.30 0.933 27.6 0.155 27.7
1.40 0.914 1.3 0.288
-8.7
1.50 0.883 -26.3 0.565 -48.4
1.60 0.824 -56.0 1.168 -92.2
1.70 0.729 -89.1 2.532 -141.8
1.80 0.563 -127.9 5.853 159.3
1.90 0.290 -177.7 14.167 85.0
2.00 0.046 -106.5 27.271 -17.5
2.10 0.038 -145.5 27.369 -116.7
2.11 0.024 -143.0 27.163 -125.3
2.12 0.010 -124.3 26.993 -133.5
2.13 0.010 -18.9 26.902 -141.7
2.14 0.025 -3.6 26.841 -149.8
2.15 0.041 -3.4 26.914 -157.7
2.16 0.057 -6.3 26.994 -165.6
2.17 0.074 -9.3 27.225 -173.5
2.18 0.093 -12.4 27.514 178.3
2.19 0.112 -15.8 27.867 170.1
2.20 0.131 -19.5 28.300 161.8
2.30 0.362 -59.2 34.159 54.8
0.000
0.000
0.000
0.001
0.001
0.000
0.001
0.005
0.004
0.004
0.004
0.004
0.004
0.004
0.004
0.004
0.004
0.004
0.004
0.004
-115.3
-81.2
8.0
-30.9
-61.0
-28.0
-4.2
-70.1
-129.5
-130.8
-137.8
-141.4
-145.2
-145.2
-151.3
-150.0
-157.3
-162.1
-166.5
149.0
2.2 2.40 0.414 -102.3 12.482 -60.2 0.002 89.7
2.50 0.439 -125.5 4.131 -120.6 0.001 110.4
2.60 0.468 -147.0 1.738 -165.4 0.001 151.9
2.0GHz 2.70 0.489 -168.4 0.808 157.7 0.001 152.9
2.80 0.500 171.8 0.418 126.7 0.001 123.9
2.90 0.504 151.8 0.229 100.4 0.001 129.5
3.00 0.499 131.8 0.143 75.1 0.001 269.6
2.1
S12
0.4 S21
Scale for |S 12| -90°
S22
MAG ANG
0.919 -1.1
0.912 -21.8
0.899 -43.7
0.879 -66.7
0.854 -91.7
0.825 -118.8
0.787 -148.8
0.746 178.2
0.724 141.8
0.760 98.1
0.705 37.9
0.430 -6.3
0.414 -8.4
0.402 -11.0
0.394 -13.7
0.393 -16.1
0.391 -18.8
0.388 -21.2
0.387 -24.7
0.388 -28.6
0.395 -32.8
0.403 -36.8
0.461 -149.0
0.576 43.4
0.702 -19.3
0.787 -56.8
0.826 -87.3
0.844 -112.5
0.855 -134.9
0.864 -154.3
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EMC21L1004GN

High Voltage - High Power GaN-HEMT Power Amplifier Module

Eudyna Devices
Eudyna Devices

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