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30MPA0562 데이터시트 PDF




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부품번호 30MPA0562 기능
기능 GaAs MMIC Power Amplifier
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30MPA0562 데이터시트, 핀배열, 회로
28.0-31.0 GHz GaAs MMIC
Power Amplifier
August 2005 - Rev 04-Aug-05
Features
Ka-Band 1 W Power Amplifier
27.0 dB Small Signal Gain
+30.0 dBm Saturated Output Power
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
30MPA0562
Chip Device Layout
General Description
Mimix Broadband's three stage 28.0-31.0 GHz GaAs MMIC
power amplifier has a small signal gain of 27.0 dB with
+30.0 dBm saturated output power.This MMIC uses Mimix
Broadbands 0.15 µm GaAs PHEMT device model
technology, and is based upon electron beam lithography
to ensure high repeatability and uniformity.The chip has
surface passivation to protect and provide a rugged part
with backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die attach
process.This device is well suited for Millimeter-wave Point-
to-Point Radio, LMDS, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2,3)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.5 VDC
112,170,450 mA
+0.3 VDC
TBD
-65 to +165 OC
-55 to MTTF Table1
MTTF Table1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness (ΔS21)
Reverse Isolation (S12)
Saturated Output Power (Psat) 2
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id1) (Vd=5.0V, Vg=-0.7V Typical)
Supply Current (Id2) (Vd=5.0V, Vg=-0.7V Typical)
Supply Current (Id3) (Vd=5.0V, Vg=-0.7V Typical)
Units Min. Typ. Max.
GHz 28.0 - 31.0
dB - 10.0 -
dB - 10.0 -
dB - 27.0 -
dB - +/-1.0 -
dB - 50.0 -
dBm - +30.0 -
VDC - +5.0 +6.0
VDC -1.0 -0.7 0.0
mA - 100 112
mA - 150 170
mA - 400 450
(2) Measured using constant current.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 5
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Characteristic Data and
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Specifications are subject
export licensing from the
tUo.Sc.hGaonvgeernwmitehnotu. Itnnpoutircceh.a©si2n0g05thMesime pixaBrtrso, aUd.Sb.aDnodm, Inesct.ic
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30MPA0562 pdf, 반도체, 판매, 대치품
28.0-31.0 GHz GaAs MMIC
Power Amplifier
August 2005 - Rev 04-Aug-05
30MPA0562
App Note [1] Biasing - It is recommended to separately bias each amplifier stage Vd1 through Vd3 at Vd(1,2,3)=5.0V with Id1=100mA, Id2=150mA,
and Id3=400mA. Separate biasing is recommended if the amplifier is to be used at high levels of saturation, where gate rectification will alter the
effective gate control voltage. For non-critical applications it is possible to parallel all stages and adjust the common gate voltage for a total drain
current Id(total)=430 mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this
gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a
single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current.The gate of
the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.7V.Typically the
gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is
available before applying the positive drain supply.
App Note [2] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass
capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or
drains are tied together) of DC bias pads.
For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd1,2,3 and Vg1,2,3) needs to have DC bypass capacitance
(~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Table (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
Rth
MTTF Hours
FITs
C/W E+ E+
C/W E+ E+
C/W E+ E+
Bias Conditions: Vd1=Vd2=Vd3=5.0V, Id1=100mA, Id2=150mA, Id3=400mA
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 5
Export
of
this
item
Characteristic Data and
may require appropriate
Specifications are subject
export licensing from the
tUo.Sc.hGaonvgeernwmitehnotu. Itnnpoutircceh.a©si2n0g05thMesime pixaBrtrso, aUd.Sb.aDnodm, Inesct.ic
customers
accept
their obligation to be compliant with U.S. Export Laws.

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30MPA0562

GaAs MMIC Power Amplifier

Mimix Broadband
Mimix Broadband

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