Datasheet.kr   

XB1002 데이터시트 PDF




Mimix Broadband에서 제조한 전자 부품 XB1002은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 XB1002 자료 제공

부품번호 XB1002 기능
기능 GaAs MMIC Buffer Amplifier
제조업체 Mimix Broadband
로고 Mimix Broadband 로고


XB1002 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 6 페이지수

미리보기를 사용할 수 없습니다

XB1002 데이터시트, 핀배열, 회로
36.0-43.0 GHz GaAs MMIC
Buffer Amplifier
April 2005 - Rev 01-Apr-05
Features
High Dynamic Range/Postivie Gain Slope
Excellent LO Driver/Buffer Amplifier
Low Noise or Power Bias Configurations
24.0 dB Small Signal Gain
4.0 dB Noise Figure at Low Noise Bias
+14 dBm P1dB Compression Point at Low Noise Bias
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadbands four stage 36.0-43.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 24.0
dB with a noise figure of 4.0 dB across the band. Gain
increases with frequency to compensate for other
component roll-off factors common in 38.0-40.0 GHz
systems.This MMIC uses Mimix Broadbands 0.15 µm
GaAs PHEMT device model technology, and is based
upon electron beam lithography to ensure high
repeatability and uniformity.The chip has surface
passivation to protect and provide a rugged part with
backsidewww.DataSheet4U.com via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process.This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
Chip Device Layout
B1002
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
250 mA
+0.3 VDC
-8.0, -3.0 dBm
-65 to +165 OC
-55 to MTTF Table3
MTTF Table3
(3) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness (S21)
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression (P1dB) 1,2
Output Third Order Intercept Point (OIP3)1,2
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1,2)
Supply Current (Id) (Vd=3.0V, Vg=-0.5V Typical)
Units Min. Typ.
GHz 36.0
-
dB - 8.0
dB - 8.0
dB - 24.0
dB - +/-2.5
dB - 45.0
dB - 4.0
dBm - +14.0
dBm - +24.0
VDC - +3.0
VDC -1.0 -0.5
mA - 110
(1) Optional power bias Vd1,2=5.5V, Id=220mA will typically yield 3-4 dB improved P1dB and OIP3.
(2) Measured using constant current.
Max.
43.0
-
-
-
-
-
-
-
-
+5.5
0.0
220
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.




XB1002 pdf, 반도체, 판매, 대치품
36.0-43.0 GHz GaAs MMIC
Buffer Amplifier
April 2005 - Rev 01-Apr-05
B1002
App Note [1] Biasing - As shown in the bonding diagram, this device can be operated with all four stages in parallel, and can be biased for
low noise performance or high power performance. Low noise bias is nominally Vd=3V, Id=110mA. More controlled performance will be
obtained by separately biasing Vd1 and Vd2 each at 3.0V, 55mA. Power bias may be as high as Vd=5.5V, Id=220mA with all stages in parallel,
or most controlled performance will be obtained by separately biasing Vd1 and Vd2 each at 5.5V, 110mA. It is also recommended to use
active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on
the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational
amplifier, with a low value resistor in series with the drain supply used to sense the current.The gate of the pHEMT is controlled to maintain
correct drain current and thus drain voltage.The typical gate voltage needed to do this is -0.5V.Typically the gate is protected with Silicon
diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying
the positive drain supply.
App Note [2] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass
capacitors (~100-200 pf ) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if
gate or drains are tied together) of DC bias pads.
For Individual Stage Bias (Recommended for Saturated Applications) -- Each DC pad (Vd1,2 and Vg1,2) needs to have DC bypass capacitance
(~100-200 pf ) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Tables
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
Channel
Temperature
Rth MTTF Hours
55 deg Celsius
75 deg Celsius
95 deg Celsius
78 deg Celsius
98 deg Celsius
118 deg Celsius
-
68.1° C/W
-
8.34E+11
4.99E+10
3.99E+09
Bias Conditions: Vd1=Vd2=3.0V, Id1=55 mA, Id2=55 mA
FITs
1.20E-03
2.00E-02
2.51E-01
Backplate
Temperature
Channel
Temperature
Rth MTTF Hours
55 deg Celsius
75 deg Celsius
95 deg Celsius
137 deg Celsius
157 deg Celsius
177 deg Celsius
-
66.3° C/W
-
6.32E+08
7.70E+07
1.13E+07
Bias Conditions: Vd1=Vd2=5.5V, Id1=110 mA, Id2=110 mA
FITs
1.58E+00
1.30E+01
8.84E+01
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 6
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

4페이지












구       성 총 6 페이지수
다운로드[ XB1002.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
XB1002

GaAs MMIC Buffer Amplifier

Mimix Broadband
Mimix Broadband
XB1004

GaAs MMIC Buffer Amplifier

Mimix Broadband
Mimix Broadband

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵