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XB1008-BD 데이터시트 PDF




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부품번호 XB1008-BD 기능
기능 GaAs MMIC Buffer Amplifier
제조업체 Mimix Broadband
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XB1008-BD 데이터시트, 핀배열, 회로
10.0-21.0 GHz GaAs MMIC
Buffer Amplifier
March 2007 - Rev 06-Mar-07
Features
Excellent Transmit LO/Output Buffer Stage
Compact Size
18.0 dB Small Signal Gain
+20.0 dBm P1dB Compression Point
5.5 dB Noise Figure
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadband’s two stage 10.0-21.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 18.0
dB with a +20.0 dBm P1dB output compression point.
This MMIC uses Mimix Broadband’s 0.15 µm GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity.The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process.This device is well suited for
www.DataSheet4U.com
Microwave and Millimeter-wave Point-to-Point Radio,
LMDS, SATCOM and VSAT applications.
B1008-BD
Chip Device Layout
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
180 mA
+0.3 VDC
+20.0 dBm
-65 to +165 OC
-55 to MTTF Graph1
MTTF Graph1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1dB Compression (P1dB) 2
Saturated Output Power (Psat)
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg2)
Supply Current (Id) (Vd=4.5V, Vg2=-0.5V Typical)
(2) Measured using constant current.
Units Min. Typ. Max.
GHz 10.0 - 21.0
dB - 15.0 -
dB - 17.0 -
dB - 18.0 -
dB - +/-2.0 -
dB - 35.0 -
dB - 5.5 -
dBm - +20.0 -
dBm - +22.0 -
VDC - +4.5 +5.5
VDC -1.0 -0.5 0.0
mA - 130 155
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 9
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.




XB1008-BD pdf, 반도체, 판매, 대치품
10.0-21.0 GHz GaAs MMIC
Buffer Amplifier
March 2007 - Rev 06-Mar-07
B1008-BD
Buffer Amplifier Measurements (cont.)
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
8.0
XB1008-BD Vd=5.0 V, Id=130 mA, Vg2=Open
9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0
Frequency (GHz)
+95 Deg C -30 Deg C +25 Deg C
XB1008-BD Vd=5.0 V, Id=130 mA, Vg2=Open
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0
Frequency (GHz)
+95 Deg C -30 Deg C +25 Deg C
XB1008-BD Vd=5.0 V, Id=130 mA, Vg2=Open
0
XB1008-BD Vd=5.0 V, Id=130 mA, Vg2=Open
0
-5
-5
-10
-10
-15
-15
-20
-20
-25
-25
8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0
*Includes fixture losses
Frequency (GHz)
+95 Dec C -30 Deg C +25 Deg C
-30
8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0
*Includes fixture losses
Frequency (GHz)
+95 Deg C -30 Deg C +25 Deg C
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 9
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

4페이지










XB1008-BD 전자부품, 판매, 대치품
10.0-21.0 GHz GaAs MMIC
Buffer Amplifier
March 2007 - Rev 06-Mar-07
Mechanical Drawing
1.100
(0.043)
0.355
(0.014)
2
0.955
(0.038)
3
B1008-BD
0.310
(0.012)
0.0
1
4
0.310
(0.012)
5
0.0
0.560
1.100
(0.022)
(0.043)
(Note: Engineering designator is 15MPA0857)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads (except Vd3) are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads (and Vd3) are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 0.75 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vg1)
Bond Pad #3 (Vd)
Bond Pad #4 (RF Out)
Bond Pad #5 (Vg2)
Bias Arrangement
Vg1
Vd
Bypass Capacitors - See App Note [2]
23
RF In 1
4 RF Out
5
Vg2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 7 of 9
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

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관련 데이터시트

부품번호상세설명 및 기능제조사
XB1008-BD

GaAs MMIC Buffer Amplifier

Mimix Broadband
Mimix Broadband

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