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XP1006-FA 데이터시트 PDF




Mimix Broadband에서 제조한 전자 부품 XP1006-FA은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 XP1006-FA 기능
기능 GaAs MMIC Power Amplifier
제조업체 Mimix Broadband
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XP1006-FA 데이터시트, 핀배열, 회로
8.5-11.0 GHz GaAs Power Amplifier
Flange, 10 pin
August 2006 - Rev 16-Aug-06
Features
X-Band 10W Power Amplifier
Flange Package
21.5 dB Large Signal Gain
+40.5 dBm Saturated Output Power
37% Power Added Efficiency
100% On-Wafer RF, DC and Output Power Testing
P1006-FA
General Description
Mimix Broadbands three stage 8.5-11.0 GHz GaAs
packaged power amplifier has a large signal gain of
21.5 dB with a +40.5 dBm saturated output power.
This device uses Mimix Broadbands 0.5 m GaAs
PHEMT device model technology, and is based upon
optical gate lithography to ensure high repeatability
and uniformity.The device comes in a 10 pin, high
frequency, LCC flange package. The package has a
copper composite base material and a laminated
ceramic substrate.This device is well suited for radar
www.DataSheet4U.com
applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
+9.0 VDC
Supply Current (Id)
4.5 A
Gate Bias Voltage (Vg)
+0.0 VDC
Input Power (Pin)
TBD
Storage Temperature (Tstg) -65 to +165 OC
Operating Temperature (Ta) -55 to MTTF Table1
Channel Temperature (Tch) MTTF Table1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Pulsed Mode F=10kHz, Duty Cycle=5%,TA=25ºC)
Parameter
Units Min. Typ. Max.
Frequency Range (f )
GHz 8.5
- 11.0
Input Return Loss (S11)1
dB - 15.0 -
Output Return Loss (S22)1
dB - 12.0 -
Large Signal Gain (S21)
dB - 21.5 -
Gain Flatness ( S21)
dB - +/-0.5 -
Reverse Isolation (S12)1
dB - 60.0 -
Saturated Output Power (PSAT)
dBm - +40.5 -
Power Added Efficiency (PAE)
% - 37 -
Drain Bias Voltage (Vd1,2,3)
VDC - +8.0 +9.0
Gate Bias Voltage (Vg)
VDC - -0.6 -
Supply Current (Id) (Vd=8.0V, Vg=-0.6V Typical)
A - 4.0 4.5
(1) Measured on-wafer pre-packaging.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.




XP1006-FA pdf, 반도체, 판매, 대치품
8.5-11.0 GHz GaAs Power Amplifier
Flange, 10 pin
August 2006 - Rev 16-Aug-06
Physical Dimensions
P1006-FA
(Note: Engineering designator is I0004966)
Functional Schematic
Pin Designations
1 10
GD
29
38
47
5 D6
Pin
0 (Flange)
1
2
3
4
5
6
7
8
9
10
Description
GND
Vg
NC
RF In
NC
NC
Vd(3)
NC
RF Out
NC
Vd(1,2,3)
Typ. Values
-0.6 V
+19.0 dBm
8.0 V
+40.0 dBm
8.0 V
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 6
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

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관련 데이터시트

부품번호상세설명 및 기능제조사
XP1006-FA

GaAs MMIC Power Amplifier

Mimix Broadband
Mimix Broadband

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