|
|
|
부품번호 | XP1006-FA 기능 |
|
|
기능 | GaAs MMIC Power Amplifier | ||
제조업체 | Mimix Broadband | ||
로고 | |||
전체 6 페이지수
8.5-11.0 GHz GaAs Power Amplifier
Flange, 10 pin
August 2006 - Rev 16-Aug-06
Features
X-Band 10W Power Amplifier
Flange Package
21.5 dB Large Signal Gain
+40.5 dBm Saturated Output Power
37% Power Added Efficiency
100% On-Wafer RF, DC and Output Power Testing
P1006-FA
General Description
Mimix Broadband’s three stage 8.5-11.0 GHz GaAs
packaged power amplifier has a large signal gain of
21.5 dB with a +40.5 dBm saturated output power.
This device uses Mimix Broadband’s 0.5 m GaAs
PHEMT device model technology, and is based upon
optical gate lithography to ensure high repeatability
and uniformity.The device comes in a 10 pin, high
frequency, LCC flange package. The package has a
copper composite base material and a laminated
ceramic substrate.This device is well suited for radar
www.DataSheet4U.com
applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
+9.0 VDC
Supply Current (Id)
4.5 A
Gate Bias Voltage (Vg)
+0.0 VDC
Input Power (Pin)
TBD
Storage Temperature (Tstg) -65 to +165 OC
Operating Temperature (Ta) -55 to MTTF Table1
Channel Temperature (Tch) MTTF Table1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Pulsed Mode F=10kHz, Duty Cycle=5%,TA=25ºC)
Parameter
Units Min. Typ. Max.
Frequency Range (f )
GHz 8.5
- 11.0
Input Return Loss (S11)1
dB - 15.0 -
Output Return Loss (S22)1
dB - 12.0 -
Large Signal Gain (S21)
dB - 21.5 -
Gain Flatness ( S21)
dB - +/-0.5 -
Reverse Isolation (S12)1
dB - 60.0 -
Saturated Output Power (PSAT)
dBm - +40.5 -
Power Added Efficiency (PAE)
% - 37 -
Drain Bias Voltage (Vd1,2,3)
VDC - +8.0 +9.0
Gate Bias Voltage (Vg)
VDC - -0.6 -
Supply Current (Id) (Vd=8.0V, Vg=-0.6V Typical)
A - 4.0 4.5
(1) Measured on-wafer pre-packaging.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
8.5-11.0 GHz GaAs Power Amplifier
Flange, 10 pin
August 2006 - Rev 16-Aug-06
Physical Dimensions
P1006-FA
(Note: Engineering designator is I0004966)
Functional Schematic
Pin Designations
1 10
GD
29
38
47
5 D6
Pin
0 (Flange)
1
2
3
4
5
6
7
8
9
10
Description
GND
Vg
NC
RF In
NC
NC
Vd(3)
NC
RF Out
NC
Vd(1,2,3)
Typ. Values
-0.6 V
+19.0 dBm
8.0 V
+40.0 dBm
8.0 V
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 6
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ XP1006-FA.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
XP1006-FA | GaAs MMIC Power Amplifier | Mimix Broadband |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |