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XP1017 데이터시트 PDF




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부품번호 XP1017 기능
기능 GaAs MMIC Power Amplifier
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XP1017 데이터시트, 핀배열, 회로
30.0-36.0 GHz GaAs MMIC
Power Amplifier
September 2005 - Rev 01-Sep-05
P1017
Features
Balanced Design Provides Good Input/Output Match
On-Chip Temperature Compensated Output
Power Detector
16.0 dB Small Signal Gain
+33.0 dBm Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
General Description
Mimix Broadbands two stage 30.0-36.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +33.0 dBm.The
device also includes Lange couplers to achieve good
input/output return loss and an on-chip temperature
compensated output power detector.This MMIC uses
Mimix Broadbands 0.15 µm GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity.www.DataSheet4U.com The chip has surface passivation to protect
and provide a rugged part with backside via holes and
gold metallization to allow either a conductive epoxy
or eutectic solder die attach process.This device is well
suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
950 mA
+0.3 VDC
+15 dBm
-65 to +165 OC
-55 to MTTF TAble4
MTTF Table 4
(4) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Units
Frequency Range (f )
GHz
Input Return Loss (S11)
dB
Output Return Loss (S22)
dB
Small Signal Gain (S21)
dB
Gain Flatness (ΔS21)
dB
Reverse Isolation (S12)
Output Power for 1 dB Compression (P1dB) 2
Output Third Order Intercept Point (OIP3)1,2
dB
dBm
dBm
Drain Bias Voltage (Vd1,2,3,4)
VDC
Gate Bias Voltage (Vg1,2,3,4)
VDC
Supply Current (Id) (Vd=4.5V, Vg=-0.7V Typical)
Detector (diff ) Output at 20 dBm3
mA
VDC
(1) Measured at +17 dBm per tone output carrier level across the full frequency band.
(2) Measured using constant current.
(3) Measured with either Vin=1.0V or Vin=5.5V and Rin=5.6kΩ.
Min.
30.0
-
-
-
-
-
-
-
-
-1.0
-
-
Typ.
-
16.0
20.0
16.0
+/-0.5
40.0
+24.0
+33.0
+4.5
-0.7
440
0.3
Max.
36.0
-
-
-
-
-
-
-
+5.5
0.0
880
-
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.




XP1017 pdf, 반도체, 판매, 대치품
30.0-36.0 GHz GaAs MMIC
Power Amplifier
September 2005 - Rev 01-Sep-05
P1017
App Note [1] Biasing - It is recommended to separately bias the upper and lower amplifiers at Vd(1,2)=4.5V Id(1+2)=220mA, and
Vd(3,4)=4.5V Id(3+4)=220mA, although best performance will result in separately biasing Vd1 through Vd4, with Id1=Id3=110mA,
Id2=Id4=110mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary;
this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias
circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to
sense the current.The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage.The typical gate
voltage needed to do this is -0.7V.Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to
sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] On-board Detector - The output signal of the power amplifier is coupled via a 15dB directional coupler to a detector,
which comprises a diode connected to the signal path, and a second diode used to provide a temperature compensation signal.The
common bias terminal is Vin, and is nominally set to forward bias both diodes.The bias is normally provided in 1 of 2 ways.The Vin
port can be connected directly to a 1V bias, and given the internal series resistance, results in about 1mA of bias current. Alternatively,
Vin can be tied to the same voltage as Vd1-Vd4 through an external series resistor Rin in the range 3 - 6kΩ.
App Note [3] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC
bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or
combination (if gate or drains are tied together) of DC bias pads.
For individual Stage Bias (Recommended for Saturated Applications) -- Each DC pad (Vd1,2,3,4 and Vg1,2,3,4) needs to have DC
bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also
recommended.
MTTF Table (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
Rth
MTTF Hours
FITs
C/W E+ E+
C/W E+ E+
C/W E+ E+
Bias Conditions: Vd1=Vd2=Vd3=Vd4=4.5V, Id1=Id2=Id3=Id4=110mA
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 6
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

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