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XP1024-BD 데이터시트 PDF




Mimix Broadband에서 제조한 전자 부품 XP1024-BD은 전자 산업 및 응용 분야에서
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부품번호 XP1024-BD 기능
기능 GaAs MMIC Power Amplifier
제조업체 Mimix Broadband
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XP1024-BD 데이터시트, 핀배열, 회로
26.0-31.0 GHz GaAs MMIC
Power Amplifier
April 2007 - Rev 17-Apr-07
Features
Balanced Design Provides Good Output Match
On-Chip Temperature Compensated Output
Power Detector
32.0 dB Small Signal Gain
+36.0 dBm Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
P1024-BD
Chip Device Layout
XP1024-BD
General Description
Mimix Broadband’s four stage 26.0-31.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +36.0 dBm.The
device also includes Lange couplers to achieve good
output return loss and an on-chip temperature
compensated output power detector.This MMIC uses
Mimix Broadband’s 0.15 µm GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and uniformity.
Thewww.DataSheet4U.com chip has surface passivation to protect and provide
a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or
eutectic solder die attach process.This device is well
suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
1700 mA
+0.3 VDC
+5 dBm
-65 to +165 OC
-55 to MTTF TAble4
MTTF Table 4
(4) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Units
Frequency Range (f )
GHz
Input Return Loss (S11)
dB
Output Return Loss (S22)
dB
Small Signal Gain (S21)
dB
Gain Flatness ( S21)
dB
Reverse Isolation (S12)
Output Power for 1 dB Compression (P1dB) 2
Output Third Order Intercept Point (OIP3)1,2
dB
dBm
dBm
Drain Bias Voltage (Vd1,3,4)
VDC
Gate Bias Voltage (Vg1,2,3,4)
VDC
Supply Current (Id) (Vd=4.5V, Vg=-0.7V Typical)
Detector (diff ) Output at 20 dBm3
mA
VDC
(1) Measured at +17 dBm per tone output carrier level across the full frequency band.
(2) Measured using constant current.
(3) Measured with either Vdet1,2=1.0V or Vdet1,2=5.5V and Rdet=5.6k
Min.
26.0
-
-
-
-
-
-
-
-
-1.0
-
-
Typ.
-
7.0
12.0
32.0
+/-1.0
50.0
+26.0
+36.0
+4.5
-0.7
1100
0.7
Max.
31.0
-
-
-
-
-
-
-
+5.5
0.0
1400
-
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 7
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.




XP1024-BD pdf, 반도체, 판매, 대치품
26.0-31.0 GHz GaAs MMIC
Power Amplifier
April 2007 - Rev 17-Apr-07
Mechanical Drawing
0.107
(0.042)
2.305
(0.091)
2.705
(0.107)
3.106
(0.122)
3.505
(0.138)
3.907
(0.154)
4.107
(0.162)
2.500
(0.098)
2
XP1024-BD
3 4 5 6 78
P1024-BD
0.429
(0.017)
1
9
0.762
(0.030)
0.0 17 16 15 14 13 12 11 10
0.0
1.506 1.905 2.306 2.705 3.106 3.505
4.107
4.900
(0.059) (0.075) (0.091) (0.107) (0.122) (0.138)
(0.162)
(0.193)
3.907
(0.154)
(Note: Engineering designator is 29MPA0373)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Pads are 0.100 x 0.200 (0.004 x 0.008).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 7.595 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vd1)
Bond Pad #3 (Vg3a)
Bond Pad #4 (Vd3a)
Bias Arrangement
Vd1 Vg3a,4a
Bond Pad #5 (Vg4a)
Bond Pad #6 (Vd4a)
Bond Pad #7 (VDIFF2)
Bond Pad #8 (VDET2)
Bond Pad #9 (RF Out)
Bond Pad #10 (VDET1)
Bond Pad #11 (VDIFF1)
Bond Pad #12 (Vd4b)
Vd3a,4a
VDIFF2
Bond Pad #13 (Vg4b)
Bond Pad #14 (Vd3b)
Bond Pad #15 (Vg3b)
Bond Pad #16 (Vg2)
Bond Pad #17 (Vg1)
VDET2
Rdet
2 XP1024-BD
33 44 55 66 7 8
Bypass Capacitors - See App Note [3]
RF In 1
99 RF Out
Vg1,2
17 16 15 14 13 122 1111 1100
Vg3b,4b
Rdet
Vd3b,4b
VDET1
VDIFF1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 7
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

4페이지










XP1024-BD 전자부품, 판매, 대치품
26.0-31.0 GHz GaAs MMIC
Power Amplifier
April 2007 - Rev 17-Apr-07
P1024-BD
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the
human body and the environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product.This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support
devices or systems without the express written approval of the President and General Counsel of Mimix
Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for
surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in a
significant injury to the user. (2) A critical component is any component of a life support device or system whose
failure to perform can be reasonably expected to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied
in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-
static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care,
sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the
backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as
possible.The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka
TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule.
Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the
total die periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note.
If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.0012 thick, placed between
the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing
action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended.The gold-tin
eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided).The
work station temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to
minimum.The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air
bridges and force impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to
the die's gold bond pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x
0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm
(0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be
avoided.Thermo-compression bonding is recommended though thermosonic bonding may be used providing
the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters.
Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short
as possible.
Part Number for Ordering
XP1024-BD-000V
XP1024-BD-EV1
Description
Where “V” is RoHS compliant die packed in vacuum release gel paks
XP1024 die evaluation module
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 7 of 7
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

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부품번호상세설명 및 기능제조사
XP1024-BD

GaAs MMIC Power Amplifier

Mimix Broadband
Mimix Broadband

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