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PDF XR1001 Data sheet ( Hoja de datos )
| Número de pieza | XR1001 | |
| Descripción | GaAs MMIC Receiver | |
| Fabricantes | Mimix Broadband | |
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33.0-40.0 GHz GaAs MMIC
Receiver
May 2005 - Rev 13-May-05
Features
Sub-Harmonic Receiver
9.0 dB Conversion Gain
4.0 dB Noise Figure
12.0 dB Image Rejection
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
R1001
R1001
General Description
Mimix Broadband’s 33.0-40.0 GHz GaAs MMIC receiver has a small
signal conversion gain of 9.0 dB with a noise figure of 4.0 dB and 12.0
dB image rejection across the band.The device is a two stage LNA
followed by a pair of sub-harmonic mixers, configured to form an image
reject mixer which requires an LO at 15.5-21.5 GHz.The image reject
mixer eliminates the need for a bandpass filter after the LNA to remove
thermal noise at the image frequency.The use of a sub-harmonic mixer
makes the provision of the LO easier than for fundamental mixers at
these frequencies. I and Q mixer outputs are provided and an external
90 degree hybrid is required to select the desired sideband.This MMIC
uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model
technology, and is based upon electron beam lithography to ensure
high repeatability and uniformity.The chip has surface passivation to
protect and provide a rugged part with backside via holes and gold
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metallization to allow either a conductive epoxy or eutectic solder die
attach process.This device is well suited for Millimeter-wave Point-to-
Point Radio, LMDS, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
+6.0 VDC
Supply Current (Id)
70 mA
Gate Bias Voltage (Vg)
+0.3 VDC
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
0 dBm
-65 to +165 OC
-55 to MTTF Table3
MTTF Table3
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25o C)
Parameter
Units Min. Typ. Max.
Frequency Range (RF) Upper Side Band
GHz 34.0 - 40.0
Frequency Range (RF) Lower Side Band
GHz 33.0 - 40.0
Frequency Range (LO)
GHz 15.5 - 21.5
Frequency Range (IF)
GHz DC - 3.0
Input Return Loss RF (S11)
Small Signal Conversion Gain RF/IF (S21) (USB/LSB) 2
dB - 18.0
dB 3.0/3.0 9.0/9.0
-
-
LO Input Drive (PLO)
Image Rejection (USB/LSB) 2
dBm +10.0 +12.0 +14.0
dBc 10.0/6.0 14.0/12.0
-
Noise Figure (NF)
dB - 4.0 -
Isolation LO/RF @ LOX2
Input Power for 1 dB Compression (P1dB)1
dB - 45.0 -
dBm - -13.0 -
Drain Bias Voltage (Vd)
VDC - +3.0 +5.5
Gate Bias Voltage (Vg)
VDC -1.0 -0.5 0.0
Supply Current (Id) (Vd=3.0V, Vg=-0.5V Typical)
mA -
30 60
(1) Measured using constant current.
(2) Min/Max limits over 33.0-39.5 GHz
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 8
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
1 page  
33.0-40.0 GHz GaAs MMIC
Receiver
May 2005 - Rev 13-May-05
R1001
App Note [1] Biasing - As shown in the bonding diagram, this device is operated with both stages in parallel,
and can be biased for low noise performance or high power performance. Low noise bias is nominally
Vd=3V, Id=30mA and is the recommended bias condition. Power bias may be as high as Vd=5.5V, Id=60mA.
It is also recommended to use active biasing to keep the currents constant as the RF power and temperature
vary; this gives the most reproducible results. Depending on the supply voltage available and the power
dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with
a low value resistor in series with the drain supply used to sense the current.The gate of the pHEMT is
controlled to maintain correct drain current and thus drain voltage.The typical gate voltage needed to do
this is -0.5V.Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure
to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain
supply.
App Note [2] Bias Arrangement - Each DC pad (Vd and Vg) needs to have DC bypass capacitance
(~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also
recommended.
Note: RF and IF ports are AC coupled (DC blocks on chip), LO port is DC coupled (no DC block on chip.)
MTTF Tables
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
84 deg Celsius
104 deg Celsius
124 deg Celsius
Rth
MTTF Hours
FITs
-
318.0° C/W
-
7.63E+11
4.79E+10
3.95E+09
1.31E-03
2.09E-02
2.53E-01
Bias Conditions: Vd=3.0V, Id=30 mA
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
159 deg Celsius
179 deg Celsius
199 deg Celsius
Rth MTTF Hours
-
314.8° C/W
-
1.39E+08
2.09E+07
3.67E+06
Bias Conditions: Vd=5.5V, Id=60 mA
FITs
7.18E+00
4.79E+01
2.72E+02
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 8
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet XR1001.PDF ] | |
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