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PDF XR1002-QB Data sheet ( Hoja de datos )
| Número de pieza | XR1002-QB | |
| Descripción | GaAs Receiver | |
| Fabricantes | Mimix Broadband | |
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18.0-30.0 GHz GaAs Receiver
QFN, 7x7 mm
November 2006 - Rev 03-Nov-06
R1002-QB
Features
Fundamental High Dynamic Range Receiver
Integrated Gain Control
+4.0 dBm Input Third Order Intercept (IIP3)
14.0 dB Conversion Gain
3.5 dB Noise Figure
25.0 dB Image Rejection
General Description
Mimix Broadband’s 18.0-30.0 GHz GaAs MMIC receiver has a 12.0 dB gain
control range, a noise figure of 3.5 dB and 25.0 dB image rejection across
the band.This device is a three stage LNA followed by a single transistor
"Tee" attenuator and an image reject fundamental resistive HEMT mixer.
Absolute Maximum Ratings
At high signal levels the radio AGC system can be used to reduce the
receiver gain improving the IIP3 providing for minimum distortion at
modulation schemes as high as 256 QAM (ETSI-see Technical Note 1).
The image reject mixer eliminates the need for a bandpass filter after the
LNA to remove thermal noise at the image frequency. I and Q mixer
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
+6.0 VDC
300 mA
+0.3 VDC
0.0 dBm
outputs are provided and an external 90 degree hybrid is required to
select the desired sideband.This MMIC uses Mimix Broadband’s 0.15 µm
GaAs PHEMT device model technology, and is based upon electron
beam lithography to ensure high repeatability and uniformity.The chip
www.DataSheet4U.com has surface passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process.This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
Storage Temperature (Tstg) -65 to +165 OC
Operating Temperature (Ta) -55 to MTTF Table3
Channel Temperature (Tch) MTTF Table3
(1) Measured using constant current, 10dB attenuation and
-20dBm total input power.
(2) At minimum attenuation.
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25o C)
Parameter
Units Min. Typ. Max.
Frequency Range (RF) Upper Side Band
GHz 18.0 - 30.0
Frequency Range (LO)
GHz 14.0 - 34.0
Frequency Range (IF)
GHz DC - 4.0
Input Return Loss RF (S11)
dB - 10.0 -
Small Signal Conversion Gain RF/IF (S21)
dB - 14.0 -
Attenuation
dB 0.0
- 12.0
LO Input Drive (PLO)
dBm +12.0 +15.0 +18.0
Image Rejection
dBc 15.0 25.0
-
Noise Figure (NF)
dB - 3.5 -
Isolation LO/RF
dB - 40.0 -
Input Third Order Intercept (IIP3)
dBm - +4.0 -
Drain Bias Voltage (Vd1,2)
VDC - +4.5 +5.5
Gate Bias Voltage (Vg1,2) (Vg4=-0.8V)
VDC -1.0 -0.5 0.0
Control Bias Voltage (Vg3)
VDC -1.5 -1.2 0.0
Supply Current (Id) (Vd=4.5V, Vg=-0.5V Typical)
mA - 135 270
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 10
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
1 page  
18.0-30.0 GHz GaAs Receiver
QFN, 7x7 mm
November 2006 - Rev 03-Nov-06
R1002-QB
App Note [1] Biasing - This device is operated with both stages in parallel, and can be biased for low noise performance or high
power performance. Low noise bias is nominally Vd=4.5V, Id=135mA and is the recommended bias condition. More controlled
performance will be obtained by separately biasing Vd1 and Vd2 each at 4.5V, 65mA. Power bias may be as high as Vd=5.5V,
Id=270mA with all stages in parallel, or most controlled performance will be obtained by separately biasing Vd1 and Vd2 each at 5.5V,
135mA. Attenuator bias, Vg3, can be adjusted from 0.0 to -1.2V with 0.0V providing maximum attenuation and -1.2V providing
minimum attenuation. Image reject mixer bias, Vg4, should nominally be -0.8V to minimize sensitivity of mixer performance to LO
level. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the
most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a
single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the
current.The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage.The typical gate voltage needed
to do this is -0.5V.Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the
applied voltage to ensure negative gate bias is available before applying the positive drain supply.
MTTF Tables
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
Rth MTTF Hours
81 deg Celsius - 6.77E+11
101 deg Celsius
65.0° C/W
4.09E+10
121 deg Celsius
-
3.29E+09
Bias Conditions: Vd=3.0V, Id=135 mA
FITs
1.48E-03
2.44E-02
3.04E-01
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
Rth MTTF Hours
142 deg Celsius
-
4.11E+08
162 deg Celsius
58.9° C/W
5.36E+07
182 deg Celsius
-
8.35E+06
Bias Conditions: Vd=5.5V, Id=270 mA
FITs
2.43E+00
1.87E+01
1.20E+02
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 10
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet XR1002-QB.PDF ] | |
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