XR1007 Datasheet PDF - Mimix Broadband
| Part Number | XR1007 | |
| Description | GaAs MMIC Receiver | |
| Manufacturers | Mimix Broadband | |
| Logo |  |
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11.0-17.0 GHz GaAs MMIC
Receiver
October 2006 - Rev 13-Oct-06
Features
Fully Integrated Design
2.2 dB Noise Figure
13.5 dB Conversion Gain
20 dB Image Rejection
+4 dBm IIP3
+3 dBm LO drive Level
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Chip Device Layout
R1007
General Description
Mimix Broadband’s 11.0-17.0 GHz GaAs MMIC receiver has a noise
figure of 2.2 dB and 20.0 dB image rejection across the band.This
device is a three stage LNA followed by an image reject resistive
pHEMT mixer and includes an integrated LO buffer amplifer.The image
reject mixer eliminates the need for a bandpass filter after the LNA to
remove thermal noise at the image frequency. I and Q mixer outputs
are provided and an external 90 degree hybrid is required to select the
desired sideband.This MMIC uses Mimix Broadband’s 0.15 µm GaAs
PHEMT device model technology, and is based upon electron beam
lithography to ensure high repeatability and uniformity.The chip has
surface passivation to protect and provide a rugged part with backside
via holes and gold metallization to allow either a conductive epoxy or
www.DataSheet4U.com eutectic solder die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1), (Id3)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
250, 200 mA
+0.3 VDC
+17 dBm
-65 to +165 OC
-55 to MTTF Table3
MTTF Table3
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25o C)
Parameter
Units Min. Typ. Max.
Frequency Range (RF)
GHz 11.0 - 17.0
Frequency Range (LO)
Frequency Range (IF)
Input Return Loss RF (S11)
Small Signal Conversion Gain RF/IF (S21)2
GHz 9.0
- 19.0
GHz DC
2.0 TBD
dB - 15.0 -
dB 10.0 13.5
-
LO Input Drive (PLO)
Image Rejection2
Noise Figure (NF)2
Isolation LO/RF
Input Third Order Intercept (IIP3)1
dBm
dBc
dB
dB
dBm
- +3.0
15.0 20.0
- 2.2
- 40.0/40.0
- +4.0
-
-
3.0
-
-
Drain Bias Voltage (Vd1)
VDC - +4.0 +5.0
Drain Bias Voltage (Vd3)
Gate Bias Voltage (Vg1,2)
Gate Bias Voltage (Vg3)
VDC - +4.0 +5.0
VDC -1.2 -0.3 +0.1
VDC -1.2 -0.1 +0.1
Gate Bias Voltage (Vg4) Mixer, Doubler
VDC -1.2 -0.5 +0.1
Supply Current (Id1) (Vd1=3.0, Vg=-0.3V Typical)
mA -
80 120
Supply Current (Id3) (Vd3=5.0V,Vg=-0.1V Typical)
mA - 100 150
(1) Measured using constant current.
(2) Guaranteed specifications from 12 to 15 GHz.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 8
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
|
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11.0-17.0 GHz GaAs MMIC
Receiver
October 2006 - Rev 13-Oct-06
R1007
App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd1=4.0V with Id1=80mA and
Vd3=4.0V with Id3=100mA. Additionally, a mixer bias is also required with Vg4=-0.5V. Adjusting Vg4 above or below this value can adversely
affect conversion gain, image rejection and intercept point performance. It is also recommended to use active biasing to keep the currents
constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the
power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in
series with the drain supply used to sense the current.The gate of the pHEMT is controlled to maintain correct drain current and thus drain
voltage.The typical gate voltage needed to do this is -0.3V.Typically the gate is protected with Silicon diodes to limit the applied voltage.
Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass
capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if
gate or drains are tied together) of DC bias pads.
For Individual Stage Bias -- Each DC pad (Vd1,3 and Vg1,2,3,4) needs to have DC bypass capacitance (~100-200 pF) as close to the device as
possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF
1.0E+06
XR1007, MTTF (yrs) vs. Backplate Temperature (°C)
1.0E+05
1.0E+04
1.0E+03
1.0E+02
1.0E+01
1.0E+00
55 65 75 85 95
Temperature (°C)
MTTF is calculated from accelerated life-time data of single devices and assumes isothermal back-plate.
Bias Conditions: Vd1=4.0V, Id1=80mA, Vd3=4.0V, Id3=100 mA
Typical Application
RF IN
11.0-17.0 GHz
XR1007
LNA
IR Mixer
Coupler
BPF
IF Out
2 GHz
AGC Control
Buffer
LO(+3.0dBm)
9.0-15.0 GHz (USB Operation)
13.0-19.0 GHz (LSB Operation)
Mimix Broadband MMIC-based 11.0-17.0 GHz Receiver Block Diagram
Mimix Broadband's 11.0-17.0 GHz GaAs MMIC Receiver can be used in saturated radio applications and linear modulation schemes up to
128 QAM.The receiver can be used in upper and lower sideband applications from 11.0-17.0 GHz.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 8
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for XR1007 electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ XR1007.PDF Datasheet ] | |
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