XU1001 Datasheet PDF - Mimix Broadband
| Part Number | XU1001 | |
| Description | GaAs MMIC Transmitter | |
| Manufacturers | Mimix Broadband | |
| Logo |  |
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There is a preview and XU1001 download ( pdf file ) link at the bottom of this page. Total 8 Pages | ||
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33.0-40.0 GHz GaAs MMIC
Transmitter
May 2005 - Rev 13-May-05
Features
Sub-Harmonic Transmitter
Low DC Power Consumption
Optional Power Bias
8.0 dB Conversion Gain
30 dB LO/RF Isolation
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Chip Device Layout
U1001
U1001
General Description
Mimix Broadband’s 33.0-40.0 GHz GaAs MMIC transmitter has
a small signal conversion gain of 8.0 dB with a 30.0 dB LO/RF
isolation.The device has a pair of sub-harmonic mixers
configured to form an image reject mixer which requires an
LO at 15.5-21.5 GHz.This is followed by a two stage LNA.The
image reject mixer reduces the need for unwanted sideband
filtering before the power amplifier.The use of the sub-
Absolute Maximum Ratings
harmonic mixer makes the provision of the LO easier than for
fundamental mixers at these frequencies. I and Q mixer inputs
are provided and an external 90 degree hybrid is required to
select the desired sideband.This MMIC uses Mimix
Broadband’s 0.15 µm GaAs PHEMT device model technology,
and is based upon electron beam lithography to ensure high
repeatability and uniformity.The chip has surface passivation
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (IF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
+6.0 VDC
70 mA
+0.3 VDC
+10 dBm
-65 to +165 OC
-55 to MTTF Table4
to protect and provide a rugged part with backside via holes
Channel Temperature (Tch) MTTF Table4
and gold metallization to allow either a conductive epoxy or
eutectic solder die attach process.This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and
(4) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
VSAT applications.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Output Return Loss RF (S22)
Small Signal Conversion Gain IF/RF (S21) (USB/LSB) 3
LO Input Drive (PLO)
Image Rejection (USB/LSB) 3
Isolation LO/RF @ LOX2
Input Power for 1 dB Compression (P1dB)1,2
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg)
Supply Current (Id) (Vd=3.0V, Vg=-0.5V Typical)
Units
GHz
GHz
GHz
GHz
dB
dB
dBm
dBc
dB
dBm
VDC
VDC
mA
Min.
34.0
33.0
15.5
DC
-
3.0/3.0
-
8.0/5.0
-
-
-
-1.0
-
Typ.
-
-
-
-
12.0
8.0/8.0
+12.0
12.0/12.0
30.0
+3.0
+3.0
-0.5
30
(1) Optional power bias Vd=5.5V, Id=60mA will typically yield improved P1dB.
(2) Measured using constant current.
(3) Min/Max limits over 33.0-39.5 GHz.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Max.
40.0
40.0
21.5
3.0
-
-
-
-
-
-
+5.5
0.0
60
Page 1 of 8
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
|
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33.0-40.0 GHz GaAs MMIC
Transmitter
May 2005 - Rev 13-May-05
U1001
App Note [1] Biasing - As shown in the bonding diagram, this device is operated with both stages in parallel.
Nominal bias is Vd=3V, Id=30mA. Power bias may be as high as Vd=5.5V, Id=60mA. It is also recommended to
use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most
reproducible results. Depending on the supply voltage available and the power dissipation constraints, the
bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series
with the drain supply used to sense the current.The gate of the pHEMT is controlled to maintain correct
drain current and thus drain voltage.The typical gate voltage needed to do this is -0.5V.Typically the gate is
protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage
to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement - Each DC pad (Vd and Vg) needs to have DC bypass capacitance
(~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also
recommended.
Note: RF and IF ports are AC coupled (DC blocks on chip). LO port is DC coupled (no DC block on chip.)
MTTF Tables
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
84 deg Celsius
104 deg Celsius
124 deg Celsius
Rth
MTTF Hours
FITs
-
318.0° C/W
-
7.63E+11
4.79E+10
3.95E+09
1.31E-03
2.09E-02
2.53E-01
Bias Conditions: Vd=3.0V, Id=30 mA
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
Rth MTTF Hours
159 deg Celsius
179 deg Celsius
199 deg Celsius
-
314.8° C/W
-
1.39E+08
2.09E+07
3.67E+06
Bias Conditions: Vd=5.5V, Id=60 mA
FITs
7.18E+00
4.79E+01
2.72E+02
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 8
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for XU1001 electronic component. |
| Information | Total 8 Pages | |
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