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부품번호 | XU1002 기능 |
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기능 | GaAs MMIC Transmitter | ||
제조업체 | Mimix Broadband | ||
로고 | |||
전체 8 페이지수
18.0-25.0 GHz GaAs MMIC
Transmitter
May 2005 - Rev 13-May-05
Features
Sub-harmonic Transmitter
Integrated IR Mixer, LO Buffer & Output Amplifier
+20.0 dBm Output Third Order Intercept (OIP3)
2.0 dBm LO Drive Level
15.0 dB Image Rejection, 10.0 dB Conversion Gain
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Chip Device Layout
U1002
General Description
Mimix Broadband’s 18.0-25.0 GHz GaAs MMIC transmitter has a
+20.0 dBm output third order intercept and 15.0 dB image
rejection across the band.This device is an image reject sub-
harmonic anti-parallel diode mixer followed by a balanced two
stage output amplifier and includes an integrated LO buffer
amplifier.The image reject mixer reduces the need for
Absolute Maximum Ratings
unwanted sideband filtering before the power amplifier.The
Supply Voltage (Vd)
+4.5 VDC
use of a sub-harmonic mixer makes the provision of the LO
easier than for fundamental mixers at these frequencies. I and Q
mixer inputs are provided and an external 90 degree hybrid is
required to select the desired sideband.This MMIC uses Mimix
Broadband’s 0.15 µm GaAs PHEMT device model technology,
and is based upon electron beam lithography to ensure high
repeatability and uniformity.The chip has surface passivation to
Supply Current (Id1,Id2)
Gate Bias Voltage (Vg)
Input Power (IF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
320, 165 mA
+0.3 VDC
0.0 dBm
-65 to +165 OC
-55 to MTTF Table3
MTTF Table3
protect and provide a rugged part with backside via holes and
gold metallization to allow either a conductive epoxy or
eutectic solder die attach process.This device is well suited for
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
Electrical Characteristics (Ambient Temperature T = 25o C)
Parameter
Units Min. Typ. Max.
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Output Return Loss RF (S22)
Small Signal Conversion Gain IF/RF (S21) 2
LO Input Drive (PLO)
Image Rejection 2
Isolation LO/RF @ LOx1/LOx2
Output Third Order Intercept (OIP3) 1,2
Drain Bias Voltage (Vd1)
Drain Bias Voltage (Vd2)
Gate Bias Voltage (Vg1,2)
Supply Current (Id1) (Vd1=3.5V, Vg=-0.3V Typical)
Supply Current (Id2) (Vd2=4.0V, Vg=-0.3V Typical)
(1) Measured using constant current.
(2) Measured using LO Input drive level of +2.0 dBm.
GHz 18.0 - 25.0
GHz 18.0 - 21.0
GHz 7.5
- 11.5
GHz DC - 3.0
dB - 16.0 -
dB - 10.0 -
dBm - +2.0 -
dBc - 15.0 -
dB - 10.0 -
dBm - +20.0 -
VDC - +3.5 +4.5
VDC - +4.0 +4.5
VDC -1.2 -0.3 +0.1
mA - 230 280
mA - 116 140
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 8
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
18.0-25.0 GHz GaAs MMIC
Transmitter
May 2005 - Rev 13-May-05
Mechanical Drawing
1.945
(0.077)
1.608
(0.063)
1
1.678
(0.066)
2
2.478
(0.098)
3
3.278
(0.129)
4
U1002
5
1.487
(0.059)
10
9
87
6
0.0
0.0
1.678
2.478
3.077 3.278 3.677 3.972
(0.066)
(0.098)
(0.121) (0.129) (0.145) (0.156)
(Note: Engineering designator is 22TX0280)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.013 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC/IF Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 4.787 mg.
Bond Pad #1 (RF In) Bond Pad #3 (IF1) Bond Pad #5 (LO) Bond Pad #7 (Vg2) Bond Pad #7 (IF2)
Bond Pad #2 (Vd1) Bond Pad #4 (Vd2) Bond Pad #6 (Vg2b) Bond Pad #8 (Vg2a) Bond Pad #8 (Vg1)
Bias Arrangement
Vd1
RF 1
2
IF1
3
Bypass Capacitors - See App Note [2]
Vd2
Vd2
Vd1
IF1
4
RF
5 LO
LO
Vg1
10
9
87
6
IF2
Vg2
Vg1 Vg2
IF2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 8
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
4페이지 18.0-25.0 GHz GaAs MMIC
Transmitter
May 2005 - Rev 13-May-05
Device Schematic
Block Diagram
Vd1 IF1
Vd2
U1002
RF Out
Output Amp
RF Out RF In
IR Mixer
RF LO
LO Buffer
LO Out
LO In
LO
Vg1 IF2
Vg2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 7 of 8
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ XU1002.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
XU1000 | GaAs MMIC Transmitter | Mimix Broadband |
XU1001 | GaAs MMIC Transmitter | Mimix Broadband |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |