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XU1004 데이터시트 PDF




Mimix Broadband에서 제조한 전자 부품 XU1004은 전자 산업 및 응용 분야에서
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부품번호 XU1004 기능
기능 GaAs MMIC Transmitter
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XU1004 데이터시트, 핀배열, 회로
32.0-45.0 GHz GaAs MMIC
Transmitter
August 2006 - Rev 02-Aug-06
Features
Sub-harmonic Transmitter
Integrated Mixer, LO Doubler/Buffer & Output Amplifier
+14.0 dBm Output Third Order Intercept (OIP3)
+4.0 dBm LO Drive Level
5.0 dB Conversion Gain
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadbands 32.0-45.0 GHz GaAs MMIC transmitter has a
+14.0 dBm output third order intercept across the band.This
device is a balanced, resistive pHEMT mixer followed by a
distributed output amplifier and includes an integrated LO
doubler and LO buffer amplifier.The use of integrated LO
doubler and LO buffer amplifier makes the provision of the LO
easier than for fundamental mixers at these frequencies. IF and
IF mixer inputs are provided and an external 180 degree hybrid
is required to select the desired sideband.This MMIC uses
Mimix Broadbands 0.15 µm GaAs PHEMT device model
technology, and is based upon electron beam lithography to
ensure high repeatability and uniformity.The chip has surface
passivation to protect and provide a rugged part with backside
via holes and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process.This device is well
suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
Chip Device Layout
U1004
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,Id2)
Gate Bias Voltage (Vg)
Input Power (IF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
200, 180 mA
+0.3 VDC
0.0 dBm
-65 to +165 OC
-55 to MTTF Table3
MTTF Table3
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25o C)
Parameter
Units Min. Typ. Max.
Frequency Range (RF) Upper Side Band
GHz 35.0 - 45.0
Frequency Range (RF) Lower Side Band
GHz 32.0 - 42.0
Frequency Range (LO)
GHz 16.0 - 25.0
Frequency Range (IF)
GHz DC - 4.0
Output Return Loss RF (S22)
Small Signal Conversion Gain IF/RF (S21) 2
dB - 10.0 -
dB - 5.0 -
LO Input Drive (PLO)
Isolation LO/RF @ LOx1
dBm - +4.0 -
dB - TBD -
Isolation LO/RF @ LOx2
Output Third Order Intercept (OIP3) 1,2
dB - TBD -
dBm - +14.0 -
Drain Bias Voltage (Vd1,2)
VDC - +4.0 +5.5
Gate Bias Voltage (Vg1,2)
VDC -1.2 -0.3 +0.1
Gate Bias Voltage (Vg3,4) Mixer, Doubler
VDC -1.2 -0.5 +0.1
Supply Current (Id1) (Vd1=4.0V, Vg=-0.3V Typical)
mA - 160 180
Supply Current (Id2) (Vd2=4.0V, Vg=-0.3V Typical)
(1) Measured using constant current.
(2) Measured using LO Input drive level of 0.0 dBm.
mA - 145 165
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 7
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.




XU1004 pdf, 반도체, 판매, 대치품
32.0-45.0 GHz GaAs MMIC
Transmitter
August 2006 - Rev 02-Aug-06
U1004
App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd1 and Vd2 with Vd(1,2)=4.0V,
Id1=160mA and Id2=145mA. Additionally, a mixer and doubler bias are also required with Vg3=Vg4=-0.5V. Adjusting Vg3 and Vg4 above or
below this value can adversely affect conversion gain, LO/RF isolation and intercept point performance. It is also recommended to use active
biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the
supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational
amplifier, with a low value resistor in series with the drain supply used to sense the current.The gate of the pHEMT is controlled to maintain
correct drain current and thus drain voltage.The typical gate voltage needed to do this is -0.3V.Typically the gate is protected with Silicon
diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying
the positive drain supply.
App Note [2] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass
capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if
gate or drains are tied together) of DC bias pads.
For Individual Stage Bias -- Each DC pad (Vd1,2 and Vg1,2,3,4) needs to have DC bypass capacitance (~100-200 pF) as close to the device as
possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Tables (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
Rth
MTTF Hours
FITs
C/W E+ E+
C/W E+ E+
C/W E+ E+
Bias Conditions: Vd1=Vd2=4.0V, Id1=160 mA, Id2=145 mA
Typical Application
RF OUT
37.0-39.5 GHz
XP1005
XU1004
XMixer
Coupler
Buffer
IF In
2 GHz
X2
LO(+2.0dBm)
17.5-18.75 GHz (USB Operation)
19.5-20.75 GHz (LSB Operation)
Mimix Broadband MMIC-based 32.0-45.0 GHz Receiver Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 45 GHz)
Mimix Broadband's 32.0-45.0 GHz XU1004 GaAs MMIC Transmitter can be used in saturated radio applications and linear modulation
schemes up to 128 QAM.The receiver can be used in upper and lower sideband applications from 32.0-45.0 GHz.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 7
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

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XU1004 전자부품, 판매, 대치품
32.0-45.0 GHz GaAs MMIC
Transmitter
August 2006 - Rev 02-Aug-06
Handling and Assembly Information
U1004
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the
human body and the environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product.This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support
devices or systems without the express written approval of the President and General Counsel of Mimix
Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for
surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in a
significant injury to the user. (2) A critical component is any component of a life support device or system whose
failure to perform can be reasonably expected to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied
in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-
static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care,
sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the
backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as
possible.The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka
TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule.
Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the
total die periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note.
If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.0012 thick, placed between
the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing
action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended.The gold-tin
eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided).The
work station temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to
minimum.The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air
bridges and force impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to
the die's gold bond pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x
0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm
(0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be
avoided.Thermo-compression bonding is recommended though thermosonic bonding may be used providing
the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters.
Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short
as possible.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 7 of 7
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

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