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부품번호 | XU1005-BD 기능 |
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기능 | GaAs MMIC Transmitter | ||
제조업체 | Mimix Broadband | ||
로고 | |||
전체 8 페이지수
10.0-18.0 GHz GaAs MMIC
Transmitter
March 2007 - Rev 01-Mar-07
U1005-BD
Features
Integrated Mixer, LO Buffer and Output Amplifier
8 dB Conversion Gain
15 dB Image Rejection
+17 dBm OIP3
+6 dBm LO Drive Level
-12 dBm LO Leakage Power
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadband's 10.0-18.0 GHz GaAs MMIC transmitter provides +17
dBm output third order intercept and 15 dB image rejection across the
band. This device is an image reject, balanced mixer followed by a two
stage output amplifier. The image reject mixer reduces the need for
unwanted sideband filtering before the power amplifier. I and Q mixer
inputs are provided and an external 90 degree hybrid is required to
select the desired sideband.This MMIC uses Mimix Broadband’s 0.15
µm GaAs PHEMT device model technology, and is based upon electron
beam lithography to ensure high repeatability and uniformity.The chip
has surface passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process.This device is well suited
for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
Chip Device Layout
XU1005-BD
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2,3)
Gate Bias Voltage (Vg)
Input Power (IF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
250,150,250 mA
+0.3 VDC
0.0 dBm
-65 to +165 OC
-55 to MTTF Table1
MTTF Table1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25o C)
Parameter
Units Min. Typ. Max.
Frequency Range (RF) Upper Side Band
GHz 10.0 - 18.0
Frequency Range (LO)
GHz 7.0
- 21.0
Frequency Range (IF)
GHz DC - 3.0
Output Return Loss RF (S22)
dB - 18.0 -
Small Signal Conversion Gain IF/RF (S21)
dB - 9.0 -
LO Input Drive (PLO)
dBm - +6.0 -
Isolation LO/RF
dB - 18.0 -
Output Third Order Intercept (OIP3)
dBm - +17.0 -
Drain Bias Voltage (Vd1,2,3)
VDC - +5.0 +5.5
Source Bias Voltage (Vs1)
VDC - -5.0 -
Gate Bias Voltage (Vg1), Mixer
VDC - -0.6 -
Gate Bias Voltage (Vg2,3)
VDC -1.2 -0.1 +0.1
Supply Current (Id1) (Vd1=5.0V)
mA - 140 200
Supply Current (Id2) (Vd2=5.0V, Vg=-0.1V Typical)
mA -
70 100
Supply Current (Id3) (Vd3=5.0V, Vg=-0.1V Typical)
mA - 140 200
Supply Current (Iss) (Vss=-5.0V)
mA - 140 200
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 8
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
10.0-18.0 GHz GaAs MMIC
Transmitter
March 2007 - Rev 01-Mar-07
Mechanical Drawing
0.169
(0.007)
2.200
(0.087)
2
0.569
(0.022)
3
1.169
(0.046)
4
1.968
2.368
(0.077) (0.093)
56
U1005-BD
7
1.824
(0.072)
1.100
(0.043)
1
XU1005-BD
12 11
0.0
10
98
0.0
0.169
(0.007)
0.569
(0.022)
1.169
(0.046)
1.968 2.368
(0.077) (0.093)
(Note: Engineering designator is 14TX0614)
3.200
(0.126)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC/IF Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 4.36 mg.
Bond Pad #1 (LO)
Bond Pad #2 (Vg1)
Bond Pad #3 (Vd1A) Bond Pad #5 (Vg2) Bond Pad #7 (RF) Bond Pad #9 (Vd2) Bond Pad #11 (Vd1B)
Bond Pad #4 (IF1) Bond Pad #6 (Vg3) Bond Pad #8 (Vd3) Bond Pad #10 (IF2) Bond Pad #12 (Vg1)
Bias Arrangement
Vd1A
Vg1
23
IF1
4
Vg2,3
56
7 RF
Bypass Capacitors - See App Note [2]
LO 1
XU1005-BD
Vg1
12 11
Vd1B
10
IF2
98
Vd2,3
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 8
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
4페이지 10.0-18.0 GHz GaAs MMIC
Transmitter
March 2007 - Rev 01-Mar-07
Device Schematic
U1005-BD
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 7 of 8
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
XU1005-BD | GaAs MMIC Transmitter | Mimix Broadband |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |