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부품번호 | FDZ293P 기능 |
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기능 | P-Channel 2.5 V Specified PowerTrench BGA MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 5 페이지수
Feb 2006
FDZ293P
P-Channel 2.5 V Specified PowerTrench® BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ293P minimizes both PCB space
and rDS(on). This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low rDS(on).
Applications
• Battery management
• Load switch
• Battery protection
G AT E
Features
• –4.6 A, –20 V
rDS(on) = 46 mΩ @ VGS = –4.5 V
rDS(on) = 72 mΩ @ VGS = –2.5 V
• Occupies only 2.25 mm2 of PCB area.
Less than 50% of the area of a SSOT-6
• Ultra-thin package: less than 0.85 mm height when
mounted to PCB
• Outstanding thermal transfer characteristics:
4 times better than SSOT-6
• Ultra-low Qg x rDS(on) figure-of-merit
• High power and current handling capability.
S
G
Bottom
Top
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current – Continuous
(Note 1a)
– Pulsed
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
B
FDZ293P
13”
©2005 Fairchild Semiconductor Corporation
D
Ratings
–20
±12
–4.6
–10
1.7
–55 to +150
72
2
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
10000 units
FDZ293P Rev. D (W)
Typical Characteristics
5
ID = -4.6A
4
3
2
1
0
02
VDS = -5V
-10V
-15V
46
Qg, GATE CHARGE (nC)
8
10
Figure 7. Gate Charge Characteristics.
100
rDS(on) LIMIT
10
1
VGS = -4.5V
0.1
SINGLE PULSE
RθJA = 157oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1200
1000
800
600
400
200
0
0
f = 1MHz
VGS = 0 V
Ciss
Coss
Crss
5 10 15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
20
SINGLE PULSE
RθJA = 157°C/W
TA = 25°C
15
10
5
0
0.01
0.1
1 10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 157 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDZ293P Rev. D (W)
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부품번호 | 상세설명 및 기능 | 제조사 |
FDZ293P | P-Channel 2.5 V Specified PowerTrench BGA MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |