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PDF IRFPS35N50L Data sheet ( Hoja de datos )
| Número de pieza | IRFPS35N50L | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD- 94227A
SMPS MOSFET IRFPS35N50L
Applications
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control applications
HEXFET® Power MOSFET
VDSS RDS(on) typ. Trr typ. ID
500V 0.125Ω 170ns 34A
Features and Benefits
• SuperFast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Enhanced dv/dt capabilities offer improved ruggedness.
• Higher Gate voltage threshold offers improved noise immunity.
Super-247™
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
34
22
140
450
Units
A
W
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
3.6
±30
15
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
1.1(10)
Min. Typ. Max. Units Conditions
––– ––– 34
MOSFET symbol
N•m (lbf•in)
(Body Diode)
A showing the
ÃcISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
––– ––– 140
––– ––– 1.5
integral reverse
fp-n junction diode.
V TJ = 25°C, IS = 34A, VGS = 0V
ftrr Reverse Recovery Time
––– 170 250 ns TJ = 25°C, IF = 34A
––– 220 330
TJ = 125°C, di/dt = 100A/µs
fQrr Reverse Recovery Charge ––– 670 1010 nC TJ = 25°C, IS = 34A, VGS = 0V
f––– 1500 2200
TJ = 125°C, di/dt = 100A/µs
IRRM Reverse Recovery Current
––– 8.5 ––– A TJ = 25°C
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
8/26/04
1 page  
35
30
25
20
15
10
5
0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
IRFPS35N50L
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01 0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
0.0001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFPS35N50L.PDF ] | |
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