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부품번호 | IRFPS40N60K 기능 |
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기능 | HEXFET Power MOSFET | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 8 페이지수
SMPS MOSFET
PD - 94384A
IRFPS40N60K
Applications
l Hard Switching Primary or PFC Switch
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Motor Drive
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Enhanced Body Diode dv/dt Capability
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
VDSS
600V
HEXFET® Power MOSFET
RDS(on) typ.
0.110 Ω
ID
40A
SUPER TO-247AC
Max.
40
24
160
570
4.5
± 30
7.5
-55 to + 150
300
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
–––
–––
Max.
600
40
57
Units
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.22
–––
40
Units
°C/W
www.irf.com
1
10/20/04
IRFPS40N60K
100000
10000
VGS = 0V, f = 1 MHZ
CCirssss
=
=
CCggsd+
Cgd,
Cds
Coss = Cds + Cgd
SHORTED
Ciss
1000
100
Coss
Crss
10
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
12
ID = 38A
10
VDS = 480V
VDS = 300V
VDS = 120V
7
5
2
0
0 50 100 150 200 250
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ= 150 °C
10
TJ= 25 °C
1
0.1
0.2
0.6 0.9
V SD,Source-to-Drain Voltage (V)
V GS = 0 V
1.3
1.6
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
10msec
100 1000 10000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
4페이지 IRFPS40N60K
D.U.T
+
-
RG
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
+
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
VDD
ISD
www.irf.com
Fig 14. For N-Channel HEXFET® Power MOSFETs
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ IRFPS40N60K.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IRFPS40N60K | HEXFET Power MOSFET | International Rectifier |
IRFPS40N60K | Power MOSFET ( Transistor ) | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |