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PDF IRLU2908 Data sheet ( Hoja de datos )
| Número de pieza | IRLU2908 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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PD - 94501
Features
AUTOMOTIVE MOSFET
IRLR2908
IRLU2908
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
D
VDSS = 80V
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
G
RDS(on) = 28mΩ
l Repetitive Avalanche Allowed up to Tjmax
ID = 30A
S
Description
Specifically designed for Automotive applications, this HEXFET ® Power MOSFET
utilizes the latest processing techniques to achieve extremely low on-resistance per silicon
area. Additional features of this HEXFET power MOSFET are a 175°C junction operating
temperature, low RθJC, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of other applications.\
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave
soldering techniques. The straight lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
D-Pak
IRLR2908
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Max.
39
28
30
150
120
VGS
EAS
EAS (tested)
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
Avalanche Current
hRepetitive Avalanche Energy
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
0.77
± 16
180
250
See Fig.12a,12b,15,16
2.3
-55 to + 175
Soldering Temperature, for 10 seconds
Thermal Resistance
300 (1.6mm from case )
Parameter
Typ.
Max.
RθJC
Junction-to-Case
jÃRθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
––– 1.3
––– 40
––– 110
www.irf.com
I-Pak
IRLU2908
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
02/13/03
1 page  
40
35
30
25
20
15
10
5
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs.
Case Temperature
IRLR2908/IRLU2908
3.0
ID = 38A
2.5 VGS = 4.5V
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
10
1
D = 0.50
0.1
0.01
0.001
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
P DM
t1
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
t2
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
1
5
5 Page 
IRLR2908/IRLU2908
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 )
7.9 ( .312 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
13 INCH
16 mm
Notes:
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.71mH, RG = 25Ω, IAS = 23A, VGS =10V. Part not recommended for use above
this value.
ISD ≤ 23A, di/dt ≤ 400A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population. 100% tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer
to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/03
www.irf.com
11
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRLU2908.PDF ] | |
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