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IRLU9343PBF 데이터시트 PDF




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IRLU9343PBF 데이터시트, 핀배열, 회로
DIGITAL AUDIO MOSFET
PD - 95386A
IRLR9343PbF
IRLU9343PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for Class-D Audio
Amplifier Applications
l Low RDSON for Improved Efficiency
l Low Qg and Qsw for Better THD and Improved
Efficiency
l Low Qrr for Better THD and Lower EMI
l 175°C Operating Junction Temperature for
Ruggedness
l Repetitive Avalanche Capability for Robustness and
Reliability
l Multiple Package Options
l Lead-Free
IRLU9343-701PbF
Key Parameters
VDS -55
RDS(ON) typ. @ VGS = -10V
93
RDS(ON) typ. @ VGS = -4.5V
150
Qg typ.
31
TJ max
175
V
m:
m:
nC
°C
D
G
D-Pak
IRLR9343
I-Pak
IRLU9343
I-Pak Leadform 701
S IRLU9343-701
Refer to page 10 for package outline
Description
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
ID @ TC = 100°C
IDM
PD @TC = 25°C
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
PD @TC = 100°C
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
hClamping Pressure
Thermal Resistance
Parameter
gRθJC
Junction-to-Case
gjRθJA Junction-to-Ambient (PCB Mounted)
gRθJA Junction-to-Ambient (free air)
Max.
-55
±20
-20
-14
-60
79
39
0.53
-40 to + 175
–––
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
V
A
W
W/°C
°C
N
Units
°C/W
Notes  through ‰ are on page 10
www.irf.com
1
12/07/04




IRLU9343PBF pdf, 반도체, 판매, 대치품
IRLR/U9343PbF & IRLU9343-701PbF
100.0
1000
TJ = 175°C
10.0
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1.0 TJ = 25°C
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
20
16
12
8
4
0
25
50 75 100 125 150
TJ , Junction Temperature (°C)
175
Fig 9. Maximum Drain Current vs. Case Temperature
10
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1 10
1msec
10msec
100
1000
-VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
2.5
2.0
ID = -250µA
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
1 D = 0.50
0.1
0.01
0.001
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci= i/Ri
R2R2
τ2 τ2
τCτ
Ri (°C/W) τi (sec)
1.162 0.000512
0.7370 0.002157
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4 www.irf.com

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IRLU9343PBF 전자부품, 판매, 대치품
IRLR/U9343PbF & IRLU9343-701PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120
WIT H ASS EMBLY
LOT CODE 1234
ASSEMBLED ON WW 16, 1999
IN T HE ASSEMBLY LINE "A"
Note: "P" in as s embly line position
indicates "Lead-Free"
INT ERNAT IONAL
RECT IFIER
LOGO
AS S E MB L Y
LOT CODE
IRF U 120
916A
12 34
PART NUMBER
DAT E CODE
YEAR 9 = 1999
WEEK 16
LINE A
www.irf.com
OR
INT ERNAT IONAL
RECT IFIER
LOGO
AS S E MB L Y
LOT CODE
IRF U 120
12 34
PART NUMBER
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 9 = 1999
WEEK 16
A = ASSEMBLY SIT E CODE
7

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