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PDF IRLU9343-701PBF Data sheet ( Hoja de datos )
| Número de pieza | IRLU9343-701PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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DIGITAL AUDIO MOSFET
PD - 95386A
IRLR9343PbF
IRLU9343PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for Class-D Audio
Amplifier Applications
l Low RDSON for Improved Efficiency
l Low Qg and Qsw for Better THD and Improved
Efficiency
l Low Qrr for Better THD and Lower EMI
l 175°C Operating Junction Temperature for
Ruggedness
l Repetitive Avalanche Capability for Robustness and
Reliability
l Multiple Package Options
l Lead-Free
IRLU9343-701PbF
Key Parameters
VDS -55
RDS(ON) typ. @ VGS = -10V
93
RDS(ON) typ. @ VGS = -4.5V
150
Qg typ.
31
TJ max
175
V
m:
m:
nC
°C
D
G
D-Pak
IRLR9343
I-Pak
IRLU9343
I-Pak Leadform 701
S IRLU9343-701
Refer to page 10 for package outline
Description
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
ID @ TC = 100°C
IDM
PD @TC = 25°C
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
PD @TC = 100°C
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
hClamping Pressure
Thermal Resistance
Parameter
gRθJC
Junction-to-Case
gjRθJA Junction-to-Ambient (PCB Mounted)
gRθJA Junction-to-Ambient (free air)
Max.
-55
±20
-20
-14
-60
79
39
0.53
-40 to + 175
–––
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
V
A
W
W/°C
°C
N
Units
°C/W
Notes through are on page 10
www.irf.com
1
12/07/04
1 page  
600
500
400
300
200
100
0
4.0
IRLR/U9343PbF & IRLU9343-701PbF
ID = -14A
500
ID
TOP -4.0A
400 -5.5A
BOTTOM -14A
300
TJ = 125°C
TJ = 25°C
6.0 8.0
-VGS, Gate-to-Source Voltage (V)
10.0
200
100
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
175
Fig 12. On-Resistance Vs. Gate Voltage
1000
Duty Cycle = Single Pulse
100
0.01
10
0.05
0.10
1
Fig 13. Maximum Avalanche Energy Vs. Drain Current
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆ Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
tav (sec)
Fig 14. Typical Avalanche Current Vs.Pulsewidth
1.0E-02
140
TOP
Single Pulse
120 BOTTOM 1% Duty Cycle
ID = -14A
100
80
60
40
20
0
25
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
175
Fig 15. Maximum Avalanche Energy Vs. Temperature
www.irf.com
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 17a, 17b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
5
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