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Número de pieza | NX5312 | |
Descripción | LASER DIODE | |
Fabricantes | NEC | |
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No Preview Available ! DATA SHEET
LASER DIODE
NX5312 Series
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s,
InGaAsP MQW-FP LASER DIODE
DESCRIPTION
The NX5312 Series is a 1 310 nm Multiple Quantum Well (MQW)
structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These
devices are designed for application up to 1.25 Gb/s.
APPLICATIONS
• STM-1 (L-1.1), STM-4 (S-4.1), ITU-T recommendations
• FTTH (Fiber To The Home) system
FEATURES
• Optical output power
Po = 5.0 mW
• Low threshold current
lth = 6 mA
• Differential Efficiency
ηd = 0.45 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package
φ 5.6 mm
• Focal point
6.35 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PL10528EJ02V0DS (2nd edition)
Date Published July 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2004, 2006
1 page NX5312 Series
<R> TYPICAL CHARACTERISTICS (TC = −40 to +85°C, unless otherwise specified)
OPTICAL OUTPUT POWER
vs. FORWARD CURRENT
6
TC = –40˚C
5
+25˚C
4
+85˚C
3
OPERATING CURRENT AND THRESHOLD
CURRENT vs. CASE TEMPERATURE
100
50
Iop
Ith
10
25
1
0 10 20 30 40 50
Forward Current IF (mA)
TEMPERATURE DEPENDENCE OF
CENTER WAVELENGTH
1 350
1 340
1 330
1 320
1 310
1 300
1 290
1 280
1 270
–60 –40 –20 0 20 40 60 80 100
Case Temperature TC (˚C)
1
–60 –40 –20 0 20 40 60
Case Temperature TC (˚C)
80 100
Remark The graphs indicate nominal characteristics.
Data Sheet PL10528EJ02V0DS
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet NX5312.PDF ] |
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