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PDF NMSD200B01 Data sheet ( Hoja de datos )
| Número de pieza | NMSD200B01 | |
| Descripción | SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE | |
| Fabricantes | Diodes Incorporated | |
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Lead-free Green
NMSD200B01
200 mA SYNCHRONOUS RECTIFIER FEATURING
N-MOSFET AND SCHOTTKY DIODE
www.DataSheet4U.com
General Description
· NMSD200B01 is best suited for switching voltage regulator
and power management applications. It improves efficiency
and reliability of DC-DC converters used in Voltage Regulator
Modules (VRM) and can support continuous maximum current
of 200mA. It features an ESD protected discrete N-MOSFET
with low on-resistance and a discrete Schottky diode with low
forward drop. It reduces component count, consumes less
space and minimizes parastic losses. The component devices
can be used as a part of a circuit or as a stand alone discrete
device.
Features
· N-MOSFET with ESD Gate Protection
· N-MOSFET with Low On-Resistance (RDS(ON))
· Low Vf Schottky Diode
· Low Static, Switching and Conduction Losses
· Good dynamic performance
· Surface Mount Package Suited for Automated Assembly
· Lead Free By Design/ROHS Compliant (Note 1)
· "Green" Device (Note 2)
Mechanical Data
· Case: SOT-363
· Case Material: Molded Plastic. "Green Molding" Compound.
UL Flammability Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminal Connections: See Diagram
· Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL- STD -202, Method 208
· Marking & Type Code Information: See Page 7
· Ordering Information: See Last Page
· Weight: 0.016 grams (approximate)
6
5
4
1
2
3
Fig. 1: SOT-363
D_Q1
6
NC A_D1
54
D
DMN601K
G Q1
NMOS
S
A
SD103AWS
D1
SCHOTTKY
C
1
G_Q1
2
S_Q1
3
C_D1
Fig 2 : Schematic and Pin Configuration
Sub-Components
DMN601K_DIE (ESD Protected)
SD103AWS_DIE
Reference
Q1
D1
Device Type
N-MOSFET
Schottky Diode
Figure
2
2
Maximum Ratings, Total Device @ TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 3)
Power Derating Factor above 25 °C
Output Current
Symbol
Pd
Pder
Iout
Thermal Characteristics
Value
200
1.6
200
Unit
mW
mW/°C
mA
Characteristic
Junction Operation and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Note 3)
(Equivalent to one heated junction of N-MOSFET)
Symbol
Tj, Tstg
RqJA
Value
-55 to +150
625
Unit
°C
°C/W
Notes:
1. No purposefully added lead.
2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30911 Rev. 2 - 2
1 of 8
NMSD200B1
www.diodes.com
ã Diodes Incorporated
1 page  
1
VGS = 10V
0.1
TA= 25°C
Pulsed
700
600
500
400
TA = -25°C
TA = -55°C
TA = 25°C
0.01
VGS = 0V
300
200
100
TA = 150°C TA = 125°C TA = 85°C
0.001
0
0.5 1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 12 Reverse Drain Current
vs. Body Diode Forward Voltage
0
0
0.2 0.4 0.6
ID, DRAIN CURRENT (A)
Fig. 13 Forward Transconductance
vs. Drain Current (VDS > ID *RDS(ON))
Schottky Barrier Diode-D1 Characteristics
0.8
1
TA = 125°C
0.1
0.01
0.001
TA = 75°C
TA = 25°C
TA = 0°C
TA = -40°C
0.0001
0
200 400 600 800 1000
VF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 14 Forward Characteristics
30
25
1000
100
10
TA = 125°C
TA = 75°C
1
TA = 25°C
0.1 TA = 0°C
0.01
TA = -40°C
0 5 10 15 20 25 30 35 40
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 15 Reverse Characteristics
f = 1.0MHz
20
15
10
5
DS30911 Rev. 2 - 2
0
0 10 20 30 40
VR, REVERSE VOLTAGE (V)
Fig. 16 Total Capacitance vs. Reverse Voltage
5 of 8
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NMSD200B01
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