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PDF LMH6552 Data sheet ( Hoja de datos )
| Número de pieza | LMH6552 | |
| Descripción | 1 GHz Fully Differential Amplifier | |
| Fabricantes | National Semiconductor | |
| Logotipo |  |
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LMH6552
1 GHz Fully Differential Amplifier
General Description
The LMH6552 is a high performance fully differential amplifier
designed to provide the exceptional signal fidelity and wide
large-signal bandwidth necessary for driving 8 to 14 bit high
speed data acquisition systems. Using National's proprietary
differential current mode input stage architecture, the
LMH6552 allows operation at gains greater than unity without
sacrificing response flatness, bandwidth, harmonic distortion,
or output noise performance.
With external gain set resistors and integrated common mode
feedback, the LMH6552 can be configured as either a differ-
ential input to differential output or single ended input to
differential output gain block. The LMH6552 can be AC or DC
coupled at the input which makes it suitable for a wide range
of applications including communication systems and high
speed oscilloscope front ends. The LMH6552 is available in
an 8-pin SOIC package as well as a space saving, thermally
enhanced 8-pin LLP package for higher performance.
Features
■ 1.0 GHz bandwidth @ AV = 1
■ 800 MHz bandwidth @ AV = 4
■ 450 MHz 0.1 dB flatness
■ 3800 V/µs slew rate
■ 10 ns settling time to 0.1%
■ −90 dB THD @ 20 MHz
■ −74 dB THD @ 70 MHz
■ 20 ns enable/shutdown pin
■ 5 to 12V operation
Applications
■ Differential ADC driver
■ Video over twisted pair
■ Differential line driver
■ Single end to differential converter
■ High speed differential signaling
■ IF/RF amplifier
■ SAW filter buffer/driver
Typical Application
Single-Ended Input Differential Output
April 2007
LMH™ is a trademark of National Semiconductor Corporation.
© 2007 National Semiconductor Corporation 300035
30003544
www.national.com
1 page  
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications, see the Electrical Characteristics tables.
Note 2: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating
of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where
TJ > TA. See Applications Section for information on temperature de-rating of this device." Min/Max ratings are based on product characterization and simulation.
Individual parameters are tested as noted.
Note 3: The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX)– TA) / θJA. All numbers apply for packages soldered directly onto a PC Board.
Note 4: The maximum output current (IOUT) is determined by device power dissipation limitations. See the Power Dissipation section of the Application Section
for more details.
Note 5: Human Body Model, applicable std. MIL-STD-883, Method 30157. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC). Field-
Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
Note 6: Short circuit current should be limited in duration to no more than 10 seconds. See the Power Dissipation section of the Application Information for more
details.
Note 7: Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will
also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material.
Note 8: Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlation using Statistical Quality
Control (SQC) methods.
Note 9: Negative input current implies current flowing out of the device.
Note 10: IBI is referred to a differential output offset voltage by the following relationship: VOD(offset) = IBI*2RF
Connection Diagram
8-Pin SOIC
Ordering Information
Package
8-Pin SOIC
Part Number
LMH6552MA
LMH6552MAX
Top View
30003508
Package Marking
LMH6552MA
Transport Media
95/Rails
2.5k Units Tape and Reel
NSC Drawing
M08A
5 www.national.com
5 Page 
Input Noise vs. Frequency
Differential S-Parameter Magnitude vs. Frequency
30003549
Differential S-Parameter Phase vs. Frequency
30003555
3rd Order Intermodulation Products vs. VOUT
30003556
3rd Order Intermodulation Products vs. VOUT
30003551
30003552
11
www.national.com
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet LMH6552.PDF ] | |
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