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Número de pieza | AO4807 | |
Descripción | Dual P-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AO4807 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! AO4807
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4807 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load
switch or in PWM applications. Standard Product
AO4807 is Pb-free (meets ROHS & Sony 259
specifications). AO4807L is a Green Product ordering
option. AO4807 and AO4807L are electrically
identical.
Features
VDS (V) = -30V
ID = -6 A (VGS = -10V)
RDS(ON) < 35mΩ (VGS = -10V)
RDS(ON) < 58mΩ (VGS = -4.5V)
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S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
D1 D2
G1 G2
S1 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±20
-6
-5
-30
2
1.44
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
35
Max
62.5
110
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet AO4807.PDF ] |
Número de pieza | Descripción | Fabricantes |
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