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부품번호 | IRF1312 기능 |
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기능 | (IRF1312x) HEXFET Power MOSFET | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 11 페이지수
www.DataSheet4U.com
Applications
l High frequency DC-DC converters
l Motor Control
l Uninterrutible Power Supplies
PD- 94504
IRF1312
IRF1312S
IRF1312L
HEXFET® Power MOSFET
VDSS
80V
RDS(on) max
10mΩ
ID
95A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF1312
D2Pak
IRF1312S
TO-262
IRF1312L
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
95
67
380
3.8
210
1.4
± 20
5.1
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Notes through are on page 11
www.irf.com
Typ.
–––
0.50
–––
–––
Max.
0.73
–––
62
40
Units
°C/W
1
7/01/02
IRF1312/S/L
100000
10000
VGS = 0V, f = 1 MHZ
C iss
= Cgs + Cgd ,
SHORTED
Crss = Cgd
Coss = Cds + Cgd
C ds
Ciss
1000
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
ID= 57A
16
VDS= 64V
VDS= 40V
VDS= 16V
12
8
4
0
0
FOR TEST CIRCUIT
SEE FIGURE 13
40 80 120 160 200
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
100.0 TJ = 175°C
10.0
1.0 TJ = 25°C
0.1
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
www.irf.com
4페이지 IRF1312/S/L
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
-
+ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-+
RG
VGS
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
- VDD
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
[VDD]
[ISD]
www.irf.com
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
7
7페이지 | |||
구 성 | 총 11 페이지수 | ||
다운로드 | [ IRF1312.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IRF131 | N-Channel Power MOSFETs/ 20 A/ 60-100 V | Fairchild Semiconductor |
IRF131 | N-CHANNEL POWER MOSFETS | Samsung semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |