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부품번호 | FDD6635 기능 |
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기능 | 35V N-Channel PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
www.DataSheet4U.com
February 2007
FDD6635
35V N-Channel PowerTrench® MOSFET
tm
General Description
This N-Channel MOSFET has been produced using
Fairchild Semiconductor’s proprietary PowerTrench
technology to deliver low Rdson and optimized Bvdss
capability to offer superior performance benefit in the
applications.
Applications
• Inverter
• Power Supplies
Features
• 59 A, 35 V
RDS(ON) = 10 mΩ @ VGS = 10 V
RDS(ON) = 13 mΩ @ VGS = 4.5 V
• Fast Switching
• RoHS compliant
D
G
S
DTO-P-2A5K2
(TO-252)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VDS(Avalanche)
VGSS
ID
Parameter
Drain-Source Voltage
Drain-Source Avalanche Voltage (maximum) (Note 4)
Gate-Source Voltage
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
Pulsed
(Note 1a)
Ratings
35
40
±20
59
15
100
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
(Note 5)
Power Dissipation
@TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
113
55
3.8
1.6
–55 to +150
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b)
2.7
40
96
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape width
FDD6635
FDD6635
D-PAK (TO-252)
13’’
12mm
Units
V
V
V
A
mJ
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
FDD6635 Rev. C2(W)
www.fairchildsemi.com
Typical Characteristics
80
VGS=10V
70
6.0V
60
4.0V
4.5V
50 3.5V
40
30
20 3.0V
10
0
0 0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
3
Figure 1. On-Region Characteristics
2.4
2.2
2
VGS = 3.5V
1.8
1.6
1.4 4.0V
4.5V
1.2 5.0V
6.0V
10V
1
0.8
0
10 20 30 40 50 60 70 80
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
1.8
ID = 15A
1.6 VGS = 10V
1.4
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature
0.029
0.025
ID = 7.5A
0.021
0.017
TA = 125oC
0.013
0.009
TA = 25oC
0.005
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
80
VDS = 5V
70
60
50
TA =-55oC
125oC
25oC
40
30
20
10
0
1.5
2 2.5 3 3.5 4
VGS, GATE TO SOURCE VOLTAGE (V)
4.5
Figure 5. Transfer Characteristics
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6635 Rev. C2(W)
www.fairchildsemi.com
4페이지 Test Circuits and Waveforms
VDS
VGS
RGEN
0V
VGS
tp
vary tP to obtain
required peak IAS
L
DUT
IAS
0.01Ω
+
VDD
-
Figure 14. Unclamped Inductive Load Test
Circuit
Drain Current Regulator
Same type as DUT
+
10V
-
10μF
50kΩ
1μF
VGS
DUT
+
VDD
-
Ig(REF)
tP
IAS
BVDSS
VDS
VDD
tAV
Figure 15. Unclamped Inductive Waveforms
10V QG
VGS
QGS
QGD
Charge, (nC)
Figure 16. Gate Charge Test Circuit
VDS
VGS
RGEN
VGS Pulse Width ≤ 1μs
Duty Cycle ≤ 0.1%
RL
DUT
+
VDD
-
Figure 18. Switching Time Test Circuit
Figure 17. Gate Charge Waveform
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
0V
VGS
10%
0V
10%
50%
Pulse Width
10%
90%
50%
Figure 19. Switching Time Waveforms
FDD6635 Rev. C2(W)
www.fairchildsemi.com
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