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PDF FDD6637 Data sheet ( Hoja de datos )
| Número de pieza | FDD6637 | |
| Descripción | 35V P-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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August 2006
www.DataSheet4U.com
FDD6637
35V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET has been produced using
Fairchild Semiconductor’s proprietary PowerTrench
technology to deliver low Rdson and optimized Bvdss
capability to offer superior performance benefit in the
applications.
Applications
• Inverter
• Power Supplies
Features
• –55 A, –35 V RDS(ON) = 11.6 mΩ @ VGS = –10 V
RDS(ON) = 18 mΩ @ VGS = –4.5 V
• High performance trench technology for extremely
low RDS(ON)
• RoHS Compliant
D
D
G
S
DTO-P-2A5K2
(TO-252)
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
VDSS
VDS(Avalanche)
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Drain-Source Avalanche Voltage (maximum) (Note 4)
Gate-Source Voltage
Continuous Drain Current
@TC=25°C
@TA=25°C
Pulsed
(Note 3)
(Note 1a)
(Note 1a)
Power Dissipation
@TC=25°C
(Note 3)
@ TA= 2 5 ° C
(Note 1a)
@ TA= 2 5 ° C
(Note 1b)
Operating and Storage Junction Temperature Range
–35
–40
±25
–55
–13
–100
57
3.1
1.3
–55 to +150
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b)
2.2
40
96
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size Tape width
FDD6637
FDD6637
D-PAK (TO-252)
13’’
12mm
Units
V
V
V
A
W
°C
°C/W
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDD6637 Rev C2(W)
www.fairchildsemi.com
1 page  
Typical Characteristics
10
ID = -14A
8
6
VDS = 10V
30V
20V
4
2
0
0 10 20 30 40
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
50
1000
100
RDS(ON) LIMIT
10
1
VGS = -10V
SINGLE PULSE
0.1 RθJA = 96oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0
0 1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area
100
SINGLE PULSE
RθJA = 96°C/W
80 TA = 25°C
60
40
20
0
0.01
0.1
1 10
t1, TIME (sec)
100 1000
Figure 11. Single Pulse Maximum Peak
Current
3200
2400
1600
f = 1MHz
VGS = 0 V
Ciss
Coss
800
Crss
0
0 5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics
30
100
SINGLE PULSE
RθJA = 96°C/W
80 TA = 25°C
60
40
20
0
0.01
0.1
1 10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation
1000
1000
100
TJ = 25oC
10
1
0.001
0.01 0.1
1
tAV, TIME IN AVANCHE(ms)
Figure 12. Unclamped Inductive
Switching Capability
10
FDD6637 Rev. C2(W)
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDD6637.PDF ] | |
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