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부품번호 | FDN352AP 기능 |
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기능 | PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 5 페이지수
August 2005
FDN352AP
Single P-Channel, PowerTrench® MOSFET
Features
■ –1.3 A, –30V
–1.1 A, –30V
RDS(ON) = 180 mΩ @ VGS = –10V
RDS(ON) = 300 mΩ @ VGS = –4.5V
■ High performance trench technology for extremely low
RDS(ON).
■ High power version of industry Standard SOT-23 package.
Identical pin-out to SOT-23 with 30% higher power handling
capability.
Applications
■ Notebook computer power management
General Description
This P-Channel Logic Level MOSFET is produced using Fair-
child Semiconductor advanced Power Trench process that has
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching perfor-
mance.
These devices are well suited for low voltage and battery pow-
ered applications where low in-line power loss is needed in a
very small outline surface mount package.
www.DataSheet4U.com
D
G
SuperSOT™-3
S
D
GS
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1b)
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Ratings
–30
±25
–1.3
–10
0.5
0.46
–55 to +150
250
75
Package Marking and Ordering Information
Device Marking
52AP
Device
FDN352AP
Reel Size
7’’
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2005 Fairchild Semiconductor Corporation
FDN352AP Rev. C1
1
www.fairchildsemi.com
Typical Characteristics
10
ID = -0.9A
8
6
4
VDS = -10V
-20V
-15V
2
0
0 0.5 1 1.5 2 2.5 3
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
10
RDS(ON) LIMIT
100µs
1ms
1
VGS = -10V
0.1 SINGLE PULSE
RθJA = 270oC/W
TA = 25oC
10ms
100ms
1s
10s
DC
0.01
0.1
1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
200
f = 1 MHz
VGS = 0 V
150
Ciss
100
Coss
50
Crss
0
0
5 10 15 20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
25
30
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 270°C/W
40 TA = 25°C
30
20
10
0
0.0001 0.001 0.01
0.1
1
10 100
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * Rθ JA
RθJA = 270°C/W
P(pk)
t1
t2
TJ – TA = P * RθJA(t)
Duty Cycle, D = t 1 / t2
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
10
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
100
1000
4 www.fairchildsemi.com
FDN352AP Rev. C1
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부품번호 | 상세설명 및 기능 | 제조사 |
FDN352AP | PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |