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PDF FDS6298 Data sheet ( Hoja de datos )
| Número de pieza | FDS6298 | |
| Descripción | 30V N-Channel Fast Switching PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDS6298
30V N-Channel Fast Switching PowerTrench® MOSFET
April 2007
tm
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
Control Switch for DC-DC Buck converters
Notebook Vcore
Telecom / Networking Point of Load
Features
13 A, 30 V.
RDS(ON) = 9 mΩ @ VGS = 10 V
RDS(ON) = 12 mΩ @ VGS = 4.5 V
Low gate charge (10nC @ VGS=5V)
Very low Miller Charge (3nC)
Low Rg (1 Ohm)
ROHS Compliant
www.DataSheet4U.com
DD DDDD
DD
SO-8
Pin 1 SO-8
SS SS SS GG
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
EAS Single Pulse Avalanche Energy
(Note 3)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6298
FDS6298
13’’
5
6
7
8
Ratings
30
±20
13
50
3.0
1.2
181
–55 to +150
50
125
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
mJ
°C
°C/W
°C/W
°C/W
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
FDS6298 Rev. C1 ( W)
1 page  
Typical Characteristics
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 125 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 12. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6298 Rev. C1 (W)
5 Page | ||
| Páginas | Total 6 Páginas | |
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