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FDS8670 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FDS8670은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 FDS8670 기능
기능 30V N-Channel PowerTrench MOSFET
제조업체 Fairchild Semiconductor
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FDS8670 데이터시트, 핀배열, 회로
www.DataSheet4U.com
August 2006
FDS8670
30V N-Channel PowerTrench® MOSFET
tm
General Description
This device has been designed specifically to improve
the efficiency of DC-DC converters. Using new
techniques in MOSFET construction, the various
components of gate charge and capacitance have been
optimized to reduce switching losses. Low gate
resistance and very low Miller charge enable excellent
performance with both adaptive and fixed dead time
gate drive circuits. Very low Rds(on) has been
maintained to provide an extremely versatile device.
Applications
High Efficiency DC-DC Converters:
Notebook Vcore Power Supply
Telecom Brick Synchronous Rectifier
Multi purpose Point Of Load
Features
21 A, 30 V
Max RDS(ON) = 3.7 m@ VGS = 10 V
Max RDS(ON) = 5.0 m@ VGS = 4.5 V
High performance trench technology for extremely low
RDS(ON) and gate charge
Minimal Qgd (5.5 nC typical)
100% RG tested (0.9 typical)
RoHS Compliant
DD
D
D
SO-8
S S SG
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS8670
FDS8670
13’’
54
63
72
81
Ratings
30
±20
21
105
2.5
1.2
1
–55 to +150
50
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
FDS8670 Rev C (W)




FDS8670 pdf, 반도체, 판매, 대치품
Typical Characteristics (continued)
10
ID = 21A
8
6
4
VDS = 10V
20V
15V
2
0
0 10 20 30 40 50 60
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1000
100 RDS(ON) LIMIT
10
1
VGS = 10V
SINGLE PULSE
0.1 RθJA = 125oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
5000
4000
3000
f = 1MHz
VGS = 0 V
Ciss
2000
1000
Crss
0
0
Coss
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
100
SINGLE PULSE
RθJA = 125°C/W
80 TA = 25°C
60
40
20
0
0.001
0.01
0.1 1 10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 125 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS8670 Rev C (W)

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