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PDF AO4702 Data sheet ( Hoja de datos )
| Número de pieza | AO4702 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO4702
N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
General Description
The AO4702 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. A Schottky Diode is
packaged in parallel to improve device performance in
synchronous recitification applications, or H-bridge
configurations. Standard Product AO4702 is Pb-free
(meets ROHS & Sony 259 specifications). AO4702L is a
Green Product ordering option. AO4702and AO4702L are
electrically identical.
Features
VDS (V) = 30V
ID = 11A (VGS = 10V)
RDS(ON) < 16mΩ (VGS = 10V)
RDS(ON) < 25mΩ (VGS = 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
SD
SD
SD
GD
SOIC-8
DK
G
SA
www.DataSheet4U.com Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
MOSFET
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current A
TA=25°C
TA=70°C
ID
11
9.3
Pulsed Drain Current B
IDM 50
Schottky reverse voltage
VKA
Continuous Forward Current A
TA=25°C
TA=70°C
IF
Pulsed Diode Forward Current B
IFM
Power Dissipation
TA=25°C
TA=70°C
PD
3
2
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Schottky
30
4.4
3.2
30
3
2
-55 to 150
Units
V
V
A
V
A
W
°C
Alpha & Omega Semiconductor, Ltd.
1 page  
AO4702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
6
4
2
0
0
VDS=15V
ID=11A
4 8 12 16
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
1500
1250
1000
Ciss
750
500
250
0 Crss
05
10 15 20 25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
100.0
10.0
RDS(ON)
limited
100µs
1ms
10ms
0.1s
10µs
1.0
TJ(Max)=150°C
TA=25°C
0.1
1s
10s
DC
0.1 1 10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
50
TJ(Max)=150°C
40 TA=25°C
30
20
10
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10 D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=40°C/W
1
0.1
0.01
0.00001
Single Pulse
PD
Ton T
0.0001
0.001
0.01 Pulse 0W.1idth (s)
1
10
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AO4702.PDF ] | |
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