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Número de pieza | AO4709 | |
Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AO4709 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! AO4709
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO4709 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of non-
synchronous DC-DC converters. Standard Product
AO4709 is Pb-free (meets ROHS & Sony 259
specifications). AO4709L is a Green Product ordering
option. AO4709 and AO4709L are electrically identical.
Features
VDS (V) = -30V
ID = -8A (VGS = -10V)
RDS(ON) < 33mΩ (VGS = -10V)
RDS(ON) < 56mΩ (VGS = -4.5V)
SCHOTTKY
VDS (V) = 30V,IF = 3A, VF<0.5V@1A
A 1 8 D/K
S 2 7 D/K
S 3 6 D/K
G 4 5 D/K
SOIC-8
G
Absolute Maximum Ratings
www.DataSheet4U.com
TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current A
TA=25°C
TA=70°C
ID
Pulsed Drain Current B
IDM
Schottky reverse voltage
VKA
Continuous Forward Current A
TA=25°C
TA=70°C
IF
Pulsed Forward Current B
IFM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
DK
SA
MOSFET
-30
±20
-8
-6.6
-40
3
2
-55 to 150
Typ
24
54
21
36
67
25
Schottky
30
4.4
3.2
30
3
2
-55 to 150
Max
40
75
30
40
75
30
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page AO4709
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
10
1 125°C
0.1
0.01
25°C
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VF (Volts)
Figure 12: Schottky Forward Characteristics
250
f = 1MHz
200
150
100
50
0
0 5 10 15 20 25 30
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
IF=3A
IF=1A
25 50 75 100 125 150
Temperature (°C)
Figure 14: Schottky Forward Drop vs.
Junction Temperature
175
100
10
1
VR=30V
0.1
0.01
0.001
0
25 50 75 100 125 150 175
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=40°C/W
1
0.1
0.01
0.00001
Single Pulse
PD
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
100
1000
Alpha & Omega Semiconductor, Ltd.
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet AO4709.PDF ] |
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