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PDF AO4826 Data sheet ( Hoja de datos )
| Número de pieza | AO4826 | |
| Descripción | 60V Dual N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AO4826
60V Dual N-Channel MOSFET
General Description
The AO4826 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Product Summary
VDS (V) = 60V
ID = 6.3A (VGS = 10V)
RDS(ON) < 25mΩ (VGS = 10V)
RDS(ON) < 30mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Top View
SOIC-8
Bottom View
Pin1
Top View
S2
G2
S1
G1
D2
D2
D1
D1
G1
D1
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
60
±20
6.3
5
40
2
1.28
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
50
73
31
Max
62.5
110
40
D2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO4826.PDF ] | |
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