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PDF AO4609 Data sheet ( Hoja de datos )
| Número de pieza | AO4609 | |
| Descripción | Complementary Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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July 2003
AO4609
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4609 uses advanced trench
technology MOSFETs to provide
excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be
used to form a level shifted high side
switch, and for a host of other
applications.
Features
n-channel
VDS (V) = 30V
ID = 8.5A
RDS(ON)
< 18mΩ (VGS=10V)
< 28mΩ (VGS=4.5V)
p-channel
-30V
-3A
RDS(ON)
< 130mΩ (VGS = 10V)
< 180mΩ (VGS = 4.5V)
< 260mΩ (VGS = 2.5V)
www.DataSheet4U.com
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
D2 D1
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
8.5
6.6
40
Power Dissipation
TA=25°C
TA=70°C
PD
2
1.28
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-30
±12
-3
-2.4
-6
2
1.28
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ Max Units
48 62.5 °C/W
74 110 °C/W
35 40 °C/W
56 62.5 °C/W
81 110 °C/W
40 48 °C/W
1 page  
AO4609
N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
VDS=15V
8 ID=8.5A
6
4
2
0
0 4 8 12 16 20
Qg (nC)
Figure 7: Gate-Charge Characteristics
1500
1250
1000
Ciss
750
500
Coss
250
0 Crss
0 5 10 15 20 25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
100.0
RDS(ON)
limited
10.0
1ms
10ms
0.1s
100µs 10µs
1.0
TJ(Max)=150°C
TA=25°C
1s
10s
DC
0.1
0.1 1 10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
50
TJ(Max)=150°C
40 TA=25°C
30
20
10
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10 D=Ton/(Ton+Toff)
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.00001
Single Pulse
PD
Ton Toff
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
Alpha & Omega Semiconductor, Ltd.
5 Page 
GAUGE PLANE
SEATING PLANE
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AO4609.PDF ] | |
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