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PDF AO4624 Data sheet ( Hoja de datos )
| Número de pieza | AO4624 | |
| Descripción | Complementary Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO4624
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4624 uses advanced trench
technology MOSFETs to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFETs may be used to
form a level shifted high side switch, and for a
host of other applications. Standard product
AO4624 is Pb-free (meets ROHS & Sony
259 specifications). AO4624L is a Green
Product ordering option. AO4624 and
AO4624L are electrically identical.
Features
n-channel
VDS (V) = 30V
ID = 6.9A (VGS=10V)
RDS(ON)
< 28mΩ (VGS=10V)
< 42mΩ (VGS=4.5V)
p-channel
-30V
-6A (VGS=-10V)
RDS(ON)
< 35mΩ (VGS = -10V)
< 58mΩ (VGS = -4.5V)
www.DataSheet4U.com
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
D2 D1
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
6.9
5.8
30
TA=25°C
Power Dissipation TA=70°C
Avalanche Current B
Repetitive avalanche energy 0.1mH B
PD
IAR
EAR
2
1.44
15
11
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-30
±20
-6
-5
-30
2
1.44
20
20
-55 to 150
Units
V
V
A
W
A
mJ
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
Maximum Junction-to-Lead C
Steady-State
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
Maximum Junction-to-Lead C
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ Max Units
48 62.5 °C/W
74 110 °C/W
35 40 °C/W
48 62.5 °C/W
74 110 °C/W
35 40 °C/W
Alpha & Omega Semiconductor, Ltd.
1 page  
AO4624
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250μA, VGS=0V
VDS=-24V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS ID=-250μA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-6A
VGS=-4.5V, ID=-5A
Forward Transconductance
VDS=-5V, ID=-6A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs Gate Source Charge
VGS=-10V, VDS=-15V, ID=-6A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=-10V, VDS=-15V, RL=2.7Ω,
tD(off)
Turn-Off DelayTime
RGEN=3Ω
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-6A, dI/dt=100A/μs
Qrr Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/μs
Min
-30
-1.2
30
Typ Max
-0.003
-2
-1
-5
±100
-2.4
27
37
45
13
-0.76
35
45
58
-1
-4.2
920 1100
190
122
3.6 5.4
18.5
9.6
2.7
4.5
7.7
5.7
20.2
9.5
20
12.3
22.2
11.6
11.5
8.5
30
14
24
15
Units
V
μA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θθJJAA is measured with the device mounted on 1in 22 FR-4 board with 2oz. Copper, in a still air environment with T AA =25°C. The
Tvahleuevainluaeniyn agnivyean gaipvpelnicaptiopnlicdaetipoennddespoenndthseounstehre'susspeer'csifsicpbeociafircdbdoeasridgnd.eTshigenc. uTrhrencturrarteingt riastibnagsiesdboansethdeotn th≤e t10s≤t1h0esrmthael rmesaisl tance
raetsinisgta. nce rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. R θJL and RθJC are equivalent terms referring
tDo. tThheermsatal triecscishtaarnaccetefrriosmticsjuinncFtioignurtoesd1ration 6le,a1d2.,14 are obtained using 80 μs pulses, duty cycle 0.5% max.
DE.. TThheessetateticstcshaarreacpteerrfiosrtmicsedinwFitighutrheesd1etvoic6e,1m2o,1u4ntaerdeoonbt1aiinned2
TEh. eThSeOsAe tceusrtvseapreropveidrefosrma esdinwgliethptuhlesederavtiicneg.mounted on 1 in 2
uFsRin-4g b8o0arμdswpituhls2eosz,.dCuotypcpyecr,lein0a.5s%tilml aairx.environment
FR-4 board with 2oz. Copper, in a still air environment
with
with
T
T
A=25°C.
A=25°C.
The
SOA curve provides a single pulse rating.
Rev 0: Apr. 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AO4624.PDF ] | |
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