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부품번호 | PHX20N06T 기능 |
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기능 | N-channel standard level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
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PHX20N06T
N-channel TrenchMOS™ standard level FET
Rev. 01 — 16 February 2004
Product data
M3D308
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a fully isolated plastic
package using TrenchMOS™ technology.
1.2 Features
s Standard level compatible
s Isolated package.
1.3 Applications
s DC motor control
s DC-to-DC converters
s Synchronous rectification
s General purpose power switching.
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1.4 Quick reference data
s VDS ≤ 55 V
s Ptot ≤ 23 W
s ID ≤ 12.9 A
s RDSon ≤ 75 mΩ.
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT186A (TO-220F), simplified outline and symbol
Description
Simplified outline
gate (g)
source (s)
mb
drain (d)
mounting base;
isolated
Symbol
d
g
MBB076
s
1 2 3 MBK110
SOT186A (TO-220F)
Philips Semiconductors
PHX20N06T
N-channel TrenchMOS™ standard level FET
5. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Rth(j-h)
Rth(j-a)
thermal resistance from junction to heatsink.
thermal resistance from junction to ambient.
[1] External heatsink connected to mounting base.
Conditions
Figure 4
vertical in still air
5.1 Transient thermal impedance
Min Typ Max Unit
[1] - - 5.4 K/W
- 55 - K/W
10
Zth(j-h)
(K/W)
δ = 0.5
0.2
1
0.1
0.05
0.02
single pulse
10-1
10-5
10-4
10-3
10-2
10-1
03am69
P
δ
=
tp
T
tp
T
t
1 10
tp (s)
Fig 4. Transient thermal impedance from junction to heatsink as a function of pulse duration.
9397 750 12834
Product data
Rev. 01 — 16 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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4페이지 Philips Semiconductors
PHX20N06T
N-channel TrenchMOS™ standard level FET
5
VGS(th)
(V)
4
3
max
typ
03aa32
10-1
ID
(A)
10-2
10-3
03aa35
min typ
max
2 min
10-4
1 10-5
0
-60 0 60 120 Tj (°C) 180
10-6
0246
VGS (V)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Tj = 25 °C; VDS = VGS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
103 03am75
C
(pF) Ciss
102 Coss
Crss
10
10-1
1
10 VDS (V) 102
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 12834
Product data
Rev. 01 — 16 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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PHX20N06T | N-channel standard level FET | NXP Semiconductors |
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