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PIP3102-R 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 PIP3102-R은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 PIP3102-R 기능
기능 LOGIC LEVEL TOPFET
제조업체 NXP Semiconductors
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PIP3102-R 데이터시트, 핀배열, 회로
Philips Semiconductors
Logic level TOPFET
Product Specification
PIP3102-R
DESCRIPTION
Monolithic logic level protected
power MOSFET using TOPFET2
technology assembled in a 5 pin
surface mounting plastic package.
APPLICATIONS
General purpose switch for driving
lamps
motors
solenoids
heaters
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
SYMBOL
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
PARAMETER
VPS Protection supply voltage
MAX.
50
30
90
150
28
NOM.
5
UNIT
V
A
W
˚C
m
UNIT
V
FEATURES
TrenchMOS output stage with
low on-state resistance
Separate input pin for higher
frequency drive
5 V logic compatible input
Separate supply pin for logic
andwww.DataSheet4U.com protection circuits with low
operating current
Overtemperature protection
Drain current limiting
Short circuit load protection
Latched overload trip state reset
by the protection pin
Diagnostic flag pin indicates
protection supply connected,
overtemperature condition,overload
tripped state, or open circuit load
(detected in the off-state)
ESD protection on all pins
Overvoltage clamping
FUNCTIONAL BLOCK DIAGRAM
PROTECTION SUPPLY
FLAG
INPUT
OC LOAD
DETECT
O/V
CLAMP
RIG
LOGIC AND
PROTECTION
DRAIN
POWER
MOSFET
SOURCE
PINNING - SOT426
PIN DESCRIPTION
1 input
2 flag
3 (connected to mb)
4 protection supply
5 source
mb drain
Fig.1. Elements of the TOPFET.
PIN CONFIGURATION
SYMBOL
mb
3
12 45
Fig. 2.
TOPFET
P
FP
I
D
S
Fig. 3.
October 2002
1
Rev 1.000




PIP3102-R pdf, 반도체, 판매, 대치품
Philips Semiconductors
Logic level TOPFET
Product Specification
PIP3102-R
PROTECTION SUPPLY CHARACTERISTICS
Limits are for -40˚C Tmb 150˚C; typicals are for Tmb = 25˚C.
SYMBOL PARAMETER
CONDITIONS
Protection & detection
VPSF
Threshold voltage1
IF = 100 µA; VDS = 5 V
IPS, IPSL
Normal operation or
protection latched
Supply current
VPS = 4.5 V
V(CL)PS
Clamping voltage
IP = 1.5 mA
Overload protection latched
VPSR
tpr
Reset voltage
Reset time
VPS 1 V
MIN. TYP. MAX. UNIT
2.5 3.45 4
V
- 210 450 µA
5.5 6.5 8.5 V
1 1.8 3
V
10 45 120 µs
OPEN CIRCUIT LOAD DETECTION CHARACTERISTICS
An open circuit load condition can be detected while the TOPFET is in the off-state. Refer to TRUTH TABLE.
VPS = 5 V. Limits are for -40˚C Tmb 150˚C and typicals are for Tmb = 25˚C.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX.
IDSP Off-state drain current2
VIS = 0 V; 2 V VDS 40 V
0.9 1.8 2.7
VDSF
Drain threshold voltage3
VIS = 0 V
0.2 1
2
VISF Input threshold voltage4
ID = 100 µA
0.3 0.8 1.1
UNIT
mA
V
V
OVERLOAD CHARACTERISTICS
Tmb = 25˚C unless otherwise specified.
SYMBOL PARAMETER
Short circuit load
ID Drain current limiting
Overload protection
PD(TO)
TDSC
Tj(TO)
Overload power threshold
Characteristic time
Overtemperature protection
Threshold temperature
CONDITIONS
VPS > 4 V
VIS = 5 V;
-40˚C Tmb 150˚C
VPS > 4 V
device trips if PD > PD(TO)
which determines trip time5
VPS = 5 V
from ID 4 A or VDS > 0.2 V
MIN. TYP. MAX. UNIT
28.5 44 60
A
75 185 250
250 380 600
W
µs
150 170 -
˚C
1 When VPS is less than VPSF the flag pin indicates low protection supply voltage. Refer to TRUTH TABLE.
2 The drain source current which flows in a normal load when the protection supply is high and the input is low.
3 If VDS < VDSF then the flag indicates open circuit load.
4 For open circuit load detection, VIS must be less than VISF.
5 Trip time td sc varies with overload dissipation PD according to the formula td sc TDSC / ln[ PD / PD(TO)].
October 2002
4
Rev 1.000

4페이지










PIP3102-R 전자부품, 판매, 대치품
Philips Semiconductors
Logic level TOPFET
Product Specification
PIP3102-R
a
2
Normalised R DS(ON) = f(Tj)
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50
0 50 100 150
Tj / OC
Fig.8. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25˚C = f(Tj); ID = 10 A; VIS = 4.4 V
RDS(ON) / mOhm
50
40
30 max.
typ.
20
10
0
012345678
VIS / V
Fig.9. Typical on-state resistance, Tj = 25˚C. RDS(ON)
= f(VIS); conditions: ID = 10 A; VPS = 4 V; tp = 300 µs
ID / A
80
y
70
VDS = 13V
60
50
40
30
20
10
0
012345678
VIS / V
Fig.10. Typical transfer characteristics, Tj = 25˚C.
ID = f(VIS); conditions: VPS 4 V tp = 300 µs
Tj (TO) OC
200
190
180
Data below 4V is for
information only. All
spec. values are for
normal operation at
4V and above.
170
160
150
3
Fig.11.
45678
VPS / V
Typical overtemperature protection threshold.
Tj(TO) = f(VPS); conditions: VIS = 5 V
IDSS / A
100E-6
10E-6
max.
1E-6
100E-9
typ.
10E-9
1E-9
-50
0 50 100 150
Tj / OC
Fig.12. Typical drain source leakage current.
IDSS = f(Tj); conditions: VDS = 40 V; VPS = VIS = 0 V
IIS / mA
3.5
3.0
2.5
2.0
1.5
Latched
1.0
Unlatched
0.5
0
01234567
VIS / V
Fig.13. Typical DC input characteristics, Tj = 25˚C.
IIS & IISL = f(VIS); normal operation & protection latched
October 2002
7
Rev 1.000

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부품번호상세설명 및 기능제조사
PIP3102-R

LOGIC LEVEL TOPFET

NXP Semiconductors
NXP Semiconductors

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