|
|
PDF PIP3201-A Data sheet ( Hoja de datos )
| Número de pieza | PIP3201-A | |
| Descripción | LOGIC LEVEL TOPFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PIP3201-A (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
|
No Preview Available !
Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
Product data
PIP3201-A
DESCRIPTION
Monolithic single channel high side
protected power switch in
TOPFET2 technology assembled in
a 5 pin plastic package.
APPLICATIONS
General controller for driving
lamps, motors, solenoids, heaters.
FEATURES
www.DataSheet4U.com
Vertical power TrenchMOS
Low on-state resistance
CMOS logic compatible
Very low quiescent current
Overtemperature protection
Load current limiting
Latched overload and
short circuit protection
Overvoltage and undervoltage
shutdown with hysteresis
On-state open circuit load
detection
Diagnostic status indication
Voltage clamping for turn off
of inductive loads
ESD protection on all pins
Reverse battery, overvoltage
and transient protection
QUICK REFERENCE DATA
SYMBOL PARAMETER
IL Nominal load current (ISO)
SYMBOL
VBG
IL
Tj
RON
PARAMETER
Continuous off-state supply voltage
Continuous load current
Continuous junction temperature
On-state resistance
Tj = 25˚C
FUNCTIONAL BLOCK DIAGRAM
STATUS
INPUT
GROUND
CONTROL &
PROTECTION
CIRCUITS
RG
MIN.
9
UNIT
A
MAX.
50
20
150
38
UNIT
V
A
˚C
mΩ
BATT
POWER
MOSFET
LOAD
PINNING - SOT263B-01
PIN DESCRIPTION
1 Ground
2 Input
3 Battery (+ve supply)
4 Status
5 Load
tab connected to pin 3
Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PIN CONFIGURATION
SYMBOL
mb mb
12345
Front view
Fig. 2.
MBL267
IB
TOPFET L
S HSS
G
Fig. 3.
May 2001 1 Rev 1.010
1 page  
Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
Product data
PIP3201-A
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C. Refer to TRUTH TABLE.
SYMBOL PARAMETER
CONDITIONS
MIN.
Undervoltage
TYP.
MAX. UNIT
VBG(UV)
∆VBG(UV)
Low supply threshold voltage1
Hysteresis
Overvoltage
2 4.2 5.5 V
- 0.5 -
V
VBG(OV)
∆VBG(OV)
High supply threshold voltage2
Hysteresis
40 45 50
-1-
V
V
TRUTH TABLE
INPUT
L
H
H
H
H
H
H
ABNORMAL CONDITIONS
DETECTED
SUPPLY
LOAD
UV OV LC SC OT
X X XXX
0 0 000
0 0 100
1 0 XXX
0 1 X00
0 0 01X
0 0 001
LOAD
OUTPUT STATUS
DESCRIPTION
OFF
ON
ON
OFF
OFF
OFF
OFF
H off
H on & normal
L on & low current detect
H supply undervoltage lockout
H supply overvoltage shutdown
L SC tripped
L OT shutdown3
KEY TO ABBREVIATIONS
L logic low
H logic high
X don’t care
0 condition not present
1 condition present
UV undervoltage
OV overvoltage
LC low current or open circuit load
SC short circuit
OT overtemperature
1 Undervoltage sensor causes the device to switch off and reset.
2 Overvoltage sensor causes the device to switch off to protect its load.
3 The status will continue to indicate OT (even if the input goes low) until the device cools below the reset threshold. Refer to OVERLOAD
PROTECTION CHARACTERISTICS.
May 2001 5 Rev 1.010
5 Page 
Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
Product data
PIP3201-A
35 VBL(TO) / V
30
max.
25 typ. 25˚C
20
min.
15
10
5
0
0 10 20 30 40 50
VBG/ V
Fig.28. Short circuit load threshold voltage.
VBL(TO) = f(VBG); conditions -40˚C ≤ Tmb ≤ 150˚C
10 nF CBL
1nF
100pF
0 10 20 VBL / V 30 40 50
Fig.29. Typical output capacitance. Tmb = 25 ˚C
Cbl = f(VBL); conditions f = 1 MHz, VIG = 0 V
0 IG / mA
-50
-100
-150
-200
-20 -15 -10
-5
VBG / V
0
Fig.30. Typical reverse battery characteristic.
IG = f(VBG); conditions IL = 0 A, Tj = 25 ˚C
IL(lim) / A
50
45
40
35
30
-50 0 50 Tj / OC 100 150 200
Fig.31. Typical overload current, VBL = 8V.
IL = f(Tj); parameter VBG = 13V;tp = 300 µs
VBL(TO) / V
12.0
11.8
11.6
11.4
11.2
11.0
10.8
10.6
10.4
10.2
10.0
-50 0 50 100 150 200
Tj / OC
Fig.32. Typical short circuit load threshold voltage.
VBL(TO) = f(Tj); condition VBG = 16 V
1e+01
Zth j-mb ( K / W )
1e+00
1e-01
D=
0.5
0.2
0.1
0.05
0.02
1e-02
0
PD tp
D=
tp
T
1e-03
1e-07
1e-05
1e-03
t/s
T
1e-01
t
Fig.33. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
1e+02
May 2001 11 Rev 1.010
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet PIP3201-A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PIP3201-A | LOGIC LEVEL TOPFET | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |