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PDF PIP3202-DC Data sheet ( Hoja de datos )
| Número de pieza | PIP3202-DC | |
| Descripción | LOGIC LEVEL TOPFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
TOPFET dual high side switch
Product specification
PIP3202-DC
DESCRIPTION
Monolithic dual channel high side
protected power switch in
TOPFET2 technology assembled in
a 7 pin plastic surface mount
package.
APPLICATIONS
General purpose switch for driving
lamps, motors, solenoids, heaters.
QUICK REFERENCE DATA
SYMBOL PARAMETER
IL Nominal load current (ISO)
SYMBOL PARAMETER
VBG Continuous off-state supply voltage
IL Continuous load current
Tj Continuous junction temperature
RON On-state resistance, Tj = 25˚C
FEATURES
www.DataSheet4U.com
Vertical power TrenchMOS
Low on-state resistance
CMOS logic compatible
Very low quiescent current
Overtemperature protection
Load current limiting
Latched overload and
short circuit protection
Overvoltage and undervoltage
shutdown with hysteresis
Off-state open circuit
load detection
Diagnostic status indication
Voltage clamping for turn off
of inductive loads
ESD protection on all pins
Reverse battery, overvoltage
and transient protection
FUNCTIONAL BLOCK DIAGRAM
INPUT 1
INPUT 2
STATUS
CONTROL &
PROTECTION
CIRCUITS
GROUND
RG
MIN.
8
UNIT
A
MAX.
50
16
150
40
UNIT
V
A
˚C
mΩ
BATT
LOAD 1
LOAD 2
Fig.1. Elements of the TOPFET dual HSS with internal ground resistor.
PINNING - SOT427
PIN DESCRIPTION
1 load 1
2 ground
3 input 1
4 connected to mb
5 status
6 input 2
7 load 2
mb battery
PIN CONFIGURATION
mb
1234567
Fig. 2.
SYMBOL
B
I1
DUAL
HSTF
I2
SG
L1
L2
Fig. 3.
CONVENTION
Positive currents flow into pins, except for load and ground pins.
September 2001
1
Rev 1.000
1 page  
Philips Semiconductors
TOPFET dual high side switch
Product specification
PIP3202-DC
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C. Refer to TRUTH TABLE.
SYMBOL PARAMETER
CONDITIONS
MIN.
Undervoltage
TYP.
MAX. UNIT
VBG(UV)
∆VBG(UV)
Low supply threshold voltage1
Hysteresis
Overvoltage
2 4.2 5.3
0.1 0.5 1
V
V
VBG(OV)
∆VBG(OV)
IBG(OV)
High supply threshold voltage2
Hysteresis
Operating current per channel VBG > VBG(OV)
35 40 45
0.4 1
2
V
V
- 1 2 mA
OVERLOAD PROTECTION CHARACTERISTICS
Independent protection per channel. Refer to TRUTH TABLE.
5.5 V ≤ VBG ≤ 35 V, limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C unless otherwise stated.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX.
UNIT
IL(lim)
PD(TO)
TDSC
Overload protection
Load current limiting
Short circuit load protection
Overload power threshold
Characteristic time
VBL = VBG; tp = 300 µs
VBG ≥ 8 V
VBG = 5.5 V
Tmb ≤ 125˚C prior to overload3
for latched protection4
which determines trip time5
Overtemperature protection
18 30 42
15 27 42
A
A
100 150 200
- 200 500
W
µs
Tj(TO)
∆Tj(TO)
Threshold junction temperature
Hysteresis6
150 170 190
3 10 20
˚C
˚C
1 Undervoltage sensors causes each channel to switch off and reset.
2 Overvoltage sensors causes each output channel to switch off to protect its load.
3 Above this temperature measurement of these parameters is prevented because OT protection may occur prior to SC protection.
4 SC protection for PD > PD(TO) is latched. Normal operation may only be resumed after the input is toggled low then high again.
Normal operation is maintained as long as PD < PD(TO) and Tj < Tj(TO).
5 Trip time td sc varies with overload dissipation PD according to the exponential model formula td sc ≈ TDSC / LN[ PD / PD(TO) ].
6 After cooling below the reset temperature the channel will resume normal operation.
September 2001
5
Rev 1.000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet PIP3202-DC.PDF ] | |
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