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PIP3210-R 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 PIP3210-R은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 PIP3210-R 기능
기능 LOGIC LEVEL TOPFET
제조업체 NXP Semiconductors
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PIP3210-R 데이터시트, 핀배열, 회로
Philips Semiconductors
TOPFET high side switch
Product specification
PIP3210-R
DESCRIPTION
Monolithic single channel high side
protected power switch in
TOPFET2 technology assembled in
a 5 pin plastic surface mount
package.
APPLICATIONS
General controller for driving
lamps, motors, solenoids, heaters.
FEATURES
www.DataSheet4U.com
Vertical power TrenchMOS
Low on-state resistance
CMOS logic compatible
Very low quiescent current
Overtemperature protection
Load current limiting
Latched overload and
short circuit protection
Overvoltage and undervoltage
shutdown with hysteresis
On-state open circuit load
detection
Diagnostic status indication
Voltage clamping for turn off
of inductive loads
ESD protection on all pins
Reverse battery, overvoltage
and transient protection
QUICK REFERENCE DATA
SYMBOL PARAMETER
IL Nominal load current (ISO)
SYMBOL PARAMETER
VBG Continuous off-state supply voltage
IL Continuous load current
Tj Continuous junction temperature
RON On-state resistance Tj = 25˚C
FUNCTIONAL BLOCK DIAGRAM
STATUS
INPUT
GROUND
CONTROL &
PROTECTION
CIRCUITS
RG
MIN.
9
UNIT
A
MAX.
50
20
150
38
UNIT
V
A
˚C
m
BATT
POWER
MOSFET
LOAD
PINNING - SOT426
PIN DESCRIPTION
1 Ground
2 Input
3 (connected to mb)
4 Status
5 Load
mb Battery
Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PIN CONFIGURATION
SYMBOL
mb
3
12 45
Fig. 2.
IB
TOPFET L
S HSS
G
Fig. 3.
September 2001
1
Rev 1.000




PIP3210-R pdf, 반도체, 판매, 대치품
Philips Semiconductors
TOPFET high side switch
Product specification
PIP3210-R
INPUT CHARACTERISTICS
9 V VBG 16 V. Limits are at -40˚C Tmb 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX.
UNIT
II Input current
VIG = 5 V
20 90 160 µA
VIG Input clamping voltage
II = 200 µA
5.5 7 8.5 V
VIG(ON)
Input turn-on threshold voltage
- 2.4 3
V
VIG(OFF)
Input turn-off threshold voltage
1.5 2.1
-
V
VIG
Input turn-on hysteresis
- 0.3 -
V
II(ON) Input turn-on current
VIG = 3 V
- - 100 µA
II(OFF)
Input turn-off current
VIG = 1.5 V
10 -
- µA
STATUS CHARACTERISTICS
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
Limits are at -40˚C Tmb 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. Refer to TRUTH TABLE.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VSG Status clamping voltage
VSG Status low voltage
IS = 100 µA
IS = 100 µA
5.5 7 8.5
- -1
Tmb = 25˚C - 0.7 0.8
V
V
V
IS Status leakage current VSG = 5 V
IS
Status saturation current1
VSG = 5 V
Tmb = 25˚C
-
-
2
- 15 µA
0.1 1 µA
7 12 mA
Application information
RS External pull-up resistor
- 47 - k
OPEN CIRCUIT DETECTION CHARACTERISTICS
An open circuit load can be detected in the on-state. Refer to TRUTH TABLE.
Limits are at -40˚C Tmb 150˚C and typical is at Tmb = 25 ˚C.
SYMBOL PARAMETER
CONDITIONS
Open circuit detection
9 V VBG 35 V
IL(TO) Low current detect threshold
Tj = 25˚C
IL(TO)
Hysteresis
MIN. TYP. MAX. UNIT
0.24 -
0.4 0.8
- 0.16
1.6
1.2
-
A
A
A
1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to
prevent possible interference with normal operation of the device.
September 2001
4
Rev 1.000

4페이지










PIP3210-R 전자부품, 판매, 대치품
Philips Semiconductors
TOPFET high side switch
Product specification
PIP3210-R
VBG
VSG
VIG
VBL
IB
II B
I
TOPFET
IL
IS HSS L
S
G
VLG
RS IG
Fig.4. High side switch measurements schematic.
(current and voltage conventions)
80 RON / mOhm
60
40
20
typ .
VBG = 6 V
9 V =< VBG =< 35 V
0
-50 0 50 Tj / OC 100 150 200
Fig.5. Typical on-state resistance, tp = 300 µs.
RON = f(Tj); parameter VBG; condition IL = 10 A
IL / A
50
40
30
VBG / V
>=8
7
6
5
20
10
0
012
VBL / V
Fig.6. Typical on-state characteristics, Tj = 25 ˚C.
IL = f(Tj); parameter VBG; tp = 250 µs
IBG(ON) / mA
5
4
UNDERVOLTAGE
SHUTDOWN
CLAMPING
OVERVOLTAGE
3 SHUTDOWN
OPERATING VIG = 5 V
2
1
QUIESCENT VIG = 0 V
0
0 10 20 30 40 50 60 70
VBG / V
Fig.7. Typical supply characteristics, 25 ˚C.
IG = f(VBG); parameter VIG
RON / mOhm
40
38
36 RON max
34
32
30
28
26
24
22
20
1
10
VBG / V
100
Fig.8. Typical on-state resistance,Tj = 25 ˚C.
RON = f(VBG); condition IL = 10 A; tp = 300 µs
IG / mA
3.0
lL = 0 A
2.5
2.0 llLL >>ILI(LT(TOO))
1.5
1.0
9 V <= VBG <= 35 V
typ.
0.5 VBG = 50 V
0
-50 0 50 Tj / OC 100 150 200
Fig.9. Typical operating supply current.
IG = f(Tj); parameters IL, VBG; condition VIG = 5 V
September 2001
7
Rev 1.000

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PIP3210-R

LOGIC LEVEL TOPFET

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