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PDF PIP3211-R Data sheet ( Hoja de datos )
| Número de pieza | PIP3211-R | |
| Descripción | LOGIC LEVEL TOPFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
TOPFET high side switch
Product Specification
PIP3211-R
DESCRIPTION
Monolithic single channel high side
protected power switch in
TOPFET2 technology assembled in
a 5 pin plastic surface mount
package.
APPLICATIONS
General controller for driving
lamps, motors, solenoids, heaters.
FEATURES
www.DataSheet4U.com
Vertical power TrenchMOS
Low on-state resistance
CMOS logic compatible
Very low quiescent current
Latched overtemperature
protection
Load current limiting
Latched short circuit load
protection
Overvoltage and undervoltage
shutdown with hysteresis
Diagnostic status indication
Voltage clamping for turn off
of inductive loads
ESD protection on all pins
Reverse battery, overvoltage
and transient protection
QUICK REFERENCE DATA
SYMBOL PARAMETER
IL Nominal load current (ISO)
SYMBOL PARAMETER
VBG Continuous off-state supply voltage
IL Continuous load current
Tj Continuous junction temperature
RON On-state resistance Tj = 25˚C
FUNCTIONAL BLOCK DIAGRAM
STATUS
INPUT
GROUND
CONTROL &
PROTECTION
CIRCUITS
RG
MIN.
9
UNIT
A
MAX.
50
20
150
38
UNIT
V
A
˚C
mΩ
BATT
POWER
MOSFET
LOAD
PINNING - SOT426
PIN DESCRIPTION
1 Ground
2 Input
3 (connected to mb)
4 Status
5 Load
mb Battery
Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PIN CONFIGURATION
SYMBOL
mb
3
12 45
Fig. 2.
IB
TOPFET L
S HSS
G
Fig. 3.
September 2001
1
Rev 1.000
1 page  
Philips Semiconductors
TOPFET high side switch
Product Specification
PIP3211-R
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C. Refer to TRUTH TABLE.
SYMBOL PARAMETER
CONDITIONS
MIN.
Undervoltage
TYP.
MAX. UNIT
VBG(UV)
∆VBG(UV)
Low supply threshold voltage1
Hysteresis
Overvoltage
2 4.2 5.5 V
- 0.5 -
V
VBG(OV)
∆VBG(OV)
High supply threshold voltage2
Hysteresis
40 45 50
-1-
V
V
TRUTH TABLE
INPUT
L
H
H
H
H
H
ABNORMAL CONDITIONS
DETECTED
SUPPLY
LOAD
UV OV LC SC OT
X X XXX
0 0 X00
1 0 XXX
0 1 X00
0 0 010
0 0 XX1
LOAD
OUTPUT STATUS
DESCRIPTION
OFF
ON
OFF
OFF
OFF
OFF
H off
H on & normal (LC not detected!)
H supply undervoltage lockout
H supply overvoltage shutdown
L SC protection
L OT shutdown
KEY TO ABBREVIATIONS
L logic low
H logic high
X don’t care
0 condition not present
1 condition present
UV undervoltage
OV overvoltage
LC low current or open circuit load
SC short circuit
OT overtemperature
1 Undervoltage sensor causes the device to switch off and reset.
2 Overvoltage sensor causes the device to switch off to protect its load.
September 2001
5
Rev 1.000
5 Page 
Philips Semiconductors
TOPFET high side switch
Product Specification
PIP3211-R
10 nF CBL
BUK215-50YT
1nF
100pF
0 10 20 30 40 50
VBL / V
Fig.28. Typical output capacitance. Tmb = 25 ˚C
Cbl = f(VBL); conditions f = 1 MHz, VIG = 0 V
0 IG / mA
-50
-100
-150
-200
-20 -15 -10
-5
VBG / V
0
Fig.29. Typical reverse battery characteristic.
IG = f(VBG); conditions IL = 0 A, Tj = 25 ˚C
IL(lim) / A
50
45
40
35
30
-50 0 50 Tj / OC 100 150 200
Fig.30. Typical overload current, VBL = 8V.
IL = f(Tj); parameter VBG = 13V;tp = 300 µs
VBL(TO) / V
12.0
11.8
11.6
11.4
11.2
11.0
10.8
10.6
10.4
10.2
10.0
-50 0
50 100 150 200
Tj / OC
Fig.31. Typical short circuit load threshold voltage.
VBL(TO) = f(Tj); condition VBG = 16 V
1e+01
Zth j-mb ( K / W )
1e+00
1e-01
D=
0.5
0.2
0.1
0.05
0.02
1e-02
0
PD tp
D = tp
T
1e-03
1e-07
1e-05
1e-03
t/s
T
1e-01
t
Fig.32. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
1e+02
September 2001
11
Rev 1.000
11 Page | ||
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| PDF Descargar | [ Datasheet PIP3211-R.PDF ] | |
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