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PIP3224-DC 데이터시트, 핀배열, 회로
PIP3224-DC
Dual channel high-side TOPFET™
Rev. 01 — 20 February 2004
Product data
1. Product profile
www.DataSheet4U.com
1.1 Description
Monolithic temperature and overload protected dual high-side power switch based on
TOPFET™ Trench technology in a 7-pin surface mount plastic package.
1.2 Features
s Very low quiescent current
s Power TrenchMOS™
s Overtemperature protection
s Over and undervoltage protection
s Reverse battery protection
s Low charge pump noise
s Loss of ground protection
s Negative load clamping
s CMOS logic compatibility
s Current limitation
s Latched overload protection
s ESD protection for all pins
s Diagnostic status indication
s Off-state open load detection
s Load dump protection
s Internal ground resistor.
1.3 Applications
s 12 and 24 V grounded loads
s Inductive loads
s High inrush current loads
s Replacement for relays and fuses.
1.4 Quick reference data
Table 1:
Symbol
RBLon
IL
IL(nom)
IL(lim)
VBG(oper)
Quick reference data
Parameter
battery-load on-state resistance
load current
nominal load current (ISO)
self-limiting load current
battery-ground operating voltage
Min Max Units
- 90 m
- 4A
3.6 -
A
8 16 A
5.5 35
V




PIP3224-DC pdf, 반도체, 판매, 대치품
Philips Semiconductors
PIP3224-DC
Dual channel high-side TOPFET™
5. Functional description
A diagnostic status ensures faster fault detection.
Active current limit is combined with latched short circuit protection in order to
protect the device in the event of a short circuit.
Thermal shutdown for high temperature conditions has an automatic restart at a
lower temperature so providing protection against excessive power dissipation.
Active clamping protects the device against low energy spikes.
Undervoltage lockout means the device shuts down for low battery voltages, thus
avoiding faulty operation.
Overvoltage shutdown in the on-state protects a load such as a lamp filament from
potentially destructive voltage spikes.
Table 4: Truth table
Abbreviations: L = logic LOW; H = logic HIGH; X = don’t care; 0 = condition not present; 1 = condition present;
UV = undervoltage; OV = overvoltage; OC = open circuit load; SC = short circuit; OT = overtemperature [1].
Input
Supply
Load 1
Load 2
Load output Status Operating mode
1 2 UV OV OC SC OT OC SC OT 1
2
L L 0 X 0 X X 0 X X OFF OFF H both off & normal
L L 0 X 1 X X X X X OFF OFF
L both off, one/both OC or
shorted to VS or battery;
Figure 10
L H 0 X 1 X X 0 0 0 OFF ON
L one off & OC, with other on
& normal
H L 0 0 0 0 0 0 0 0 ON OFF H one on & normal, with other
off & normal
H H 0 0 0 0 0 0 0 0 ON ON
H both on & normal
H X 1 0 X X X 0 X X OFF OFF H supply undervoltage lockout
H X 0 1 X 0 0 X 0 0 OFF OFF H supply overvoltage
shutdown
H X 0 0 0 1 X X X X OFF X
L one SC tripped
H L 0 0 0 1 X 0 0 X OFF OFF
L one SC tripped, with other
off & normal
H H 0 0 0 1 X 0 0 0 OFF ON
L one SC tripped, with other
on & normal
H X 0 0 0 0 1 X X X OFF X
L one OT shutdown
H L 0 0 0 0 1 0 0 X OFF OFF
L one OT shutdown, with other
off & normal
H H 0 0 0 0 1 0 0 0 OFF ON
L one OT shutdown, with other
on & normal
[1] The status will continue to indicate OT (even if the input goes LOW) until the device cools below the reset threshold temperature.
See “Overtemperature protection” characteristics in Table 7 “Static characteristics”.
9397 750 12362
Product data
Rev. 01 — 20 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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PIP3224-DC 전자부품, 판매, 대치품
Philips Semiconductors
PIP3224-DC
Dual channel high-side TOPFET™
Table 7: Static characteristics…continued
Limits are valid for 40 °C Tmb +150 °C and typical values for Tmb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
IL(oc)
load open circuit current
VLG = 3.5 V; per channel
VLG = 16 V; per channel
- 22
- 200
RL(oc)
open circuit load resistor
VS = 5 V; connected externally;
per channel; Figure 10
- 10
Undervoltage [9]
VBG(uv)
battery-ground undervoltage
[11] 2
4.2
VBG(uv)(hys) battery-ground undervoltage
hysteresis
- 0.5
Overvoltage [9]
VBG(ov)
battery-ground overvoltage
[12] 35
40
VBG(ov)(hys) battery-ground overvoltage hysteresis
IG(ov)
overvoltage operating current
VBG = 45 V; per channel
0.2 1
-1
Overload protection
IL(lim)
self-limiting load current
Overtemperature protection [9][10]
VBG 8 V; VBL = VBG; Figure 7
8 12
Tj(th)
threshold junction temperature
[13] 150 170
Tj(th)(hys)
threshold junction temperature
hysteresis
3 10
Status [9]
VSG(CL)
VSG(L)
status-ground clamping voltage
status-ground low voltage
IS = 100 µA
IS = 100 µA; Figure 6
IS = 250 µA
5.5 7
- 0.7
--
IS(off)
status leakage current
RS status resistor
VSG = 5 V
Tmb = 150 °C
Tmb = 25 °C
VSG = 5 V; connected externally;
Figure 10
[14]
-
-
-
-
0.1
47
Max
40
300
-
5.3
1.5
45
2
2.5
16
190
20
8.5
0.9
1.1
10
1
-
Unit
µA
µA
k
V
V
V
V
mA
A
°C
°C
V
V
V
µA
µA
k
[1] For a high-side switch, the load pin voltage goes negative with respect to the ground during the turn-off of an inductive load. This
negative voltage is clamped by the device.
[2] 9 V VBG 35 V
[3] This is the current drawn from the supply when both inputs are LOW, and includes leakage current to the loads.
[4] Defined as in ISO10483-1. For comparison purposes only.
[5] This only applies to the RBLon per channel. The supply and input voltages for the RBLon tests are continuous. The specified pulse
duration is tp = 300 µs, and refers only to the applied load current.
[6] RG is a resistor incorporated internally into the package.
[7] 5.5 V VBG 35 V
[8] An open circuit load can be detected in the off-state and requires an external pull-up resistor, RL(oc).
[9] See Table 4 “Truth table”
[10] Overtemperature protection is not active during reverse current operation.
[11] Undervoltage sensor causes each output channel to switch off and reset.
[12] Overvoltage sensor causes each output channel to switch off to protect the load.
[13] After cooling below the reset temperature the channel will resume normal operation.
[14] The status output is an open drain transistor and requires an external pull-up resistor, RS, to indicate a logic HIGH.
9397 750 12362
Product data
Rev. 01 — 20 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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