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PDF APT75GT120JRDQ3 Data sheet ( Hoja de datos )
| Número de pieza | APT75GT120JRDQ3 | |
| Descripción | Thunderbolt IGBT | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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TYPICAL PERFORMANCE CURVES
®
APT1752G0T01V20JRDQ3
APT75GT120JRDQ3
Thunderbolt IGBT®
The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
switching speed.
• Low Forward Voltage Drop
• High Freq. Switching to 20KHz
• Low Tail Current
• RBSOA and SCSOA Rated
• Ultra Low Leakage Current
EE
G C SOT-227
ISOTOP®
"UL Recognized"
file # E145592
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT75GT120JRDQ3
UNIT
VCES
VGE
www.DataSheet4U.com
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
±30
97
42
225
225A @ 1200V
481
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
RG(int)
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA)
Gate Threshold Voltage (VCE = VGE, I C = 3mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 75A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 75A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
MIN TYP MAX Units
1200
4.5 5.5 6.5 Volts
2.7 3.2 3.7
3.9
200
TBD
µA
480 nA
5Ω
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
1 page  
TYPICAL PERFORMANCE CURVES
4,000
Cies
1,000
500
Coes
Cres
100 0
10 20 30 40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT75GT120JRDQ3
250
200
150
100
50
0 0 200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.30
0.25
D = 0.9
0.20
0.7
0.15
0.10
0.05
0
10-5
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
Junction
temp. (°C)
RC MODEL
0.0594
0.0254
Power
(watts)
0.158
0.496
Case temperature. (°C)
0.0436
11.6
Figure 19b, TRANSIENT THERMAL IMPEDANCE MODEL
50
Fmax = min (fmax, fmax2)
10
fmax1
=
td(on)
+
0.05
tr + td(off)
+
tf
5
TTDJC===50172%55°°CC
3
VRCGE==5Ω400V
15 25
35
45
55
65
fmax2 =
Pdiss - Pcond
Eon2 + Eoff
Pdiss =
TJ - TC
RθJC
75
Figure 20, OICp,eCraOtLinLgECFTreOqRueCnUcRyRvEsNCTo(Alle) ctor Current
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet APT75GT120JRDQ3.PDF ] | |
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