|
|
|
부품번호 | ZXTP25020BFH 기능 |
|
|
기능 | PNP medium power transistor | ||
제조업체 | Zetex Semiconductors | ||
로고 | |||
전체 6 페이지수
ZXTP25020BFH
20V, SOT23, PNP medium power transistor
www.DataSheet4U.com
Summary
BVCEX > -40V
BVCEO > -20V
BVECO > -7V
IC(cont) = -4A
RCE(sat) = 32 m⍀
VCE(sat) < -60mV @ 1A
PD = 1.25W
Complementary part number ZXTN25020BFH
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
• High power dissipation SOT23 package
• High peak current
• Low saturation voltage
• 40V forward blocking voltage
• 7V reverse blocking voltage
Applications
• MOSFET and IGBT gate driving
• DC - DC converters
• Motor drive
• High side driver
• Battery charging
Ordering information
Device
Reel size
(inches)
Tape width
(mm)
Quantity per reel
ZXTP25020BFHTA
7
8
3,000
Device marking
1A9
C
B
E
E
C
B
Pinout - top view
Issue 1 - May 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com
ZXTP25020BFH
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (forward blocking)
Symbol
BVCBO
BVCEX
Min.
-40
-40
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
BVCEO
BVEBO
-20
-7
Typ.
-60
-60
-35
-8.2
Max. Unit Conditions
V IC = -100A
V IE = -100A (*) RBE < 1k⍀
or 1V < VBE < -0.25V
V IC = -10mA(*)
V IE = -100A
Emitter-collector breakdown BVECX -6 -8
voltage (reverse blocking)
V IE = -100A (*) RBC < 10k⍀
or 0.25 < VBC < -0.25V
Emitter-collector breakdown BVECO
voltage (base open)
-7 -8.6
V IE = -100A(*)
Collector-base cut-off current ICBO
<-1 -50 nA VCB = -32V
-20 A VCB = -32V, Tamb= 100°C
Collector-emitter cut-off
current
ICEX
- 100 nA VCE = -32V; RBE < 1k⍀
or 1V < VBE < -0.25V
Emitter-base cut-off current IEBO
<-1 -50 nA VEB = -5.6V
Collector-emitter saturation VCE(sat)
voltage
-44 -60 mV IC = -1A, IB = -100mA(*)
-80 -110 mV IC = -1A, IB = -20mA(*)
-125 -190 mV IC = -2A, IB = -40mA(*)
-160 -210 mV IC = -4A, IB = -200mA(*)
-160 -210 mV IC = -5A, IB = -500mA(*)
Base-emitter saturation
voltage
VBE(sat)
-930 -1000 mV IC = -4A, IB = -200mA(*)
Base-emitter turn-on voltage VBE(on)
-820 -900 mV IC = -4A, VCE = -2V(*)
Static forward current
transfer ratio
hFE 100 200 300
80 160
IC = -10mA, VCE = -2V(*)
IC = -1A, VCE = -2V(*)
50 100
IC = -4A, VCE = -2V(*)
45 IC = -10A, VCE = -2V(*)
Transition frequency
fT
250 MHz IC = -50mA, VCE = -10V
f = 100MHz
Output capacitance
Delay time
Rise time
Storage time
Fall time
COBO
td
tr
ts
tf
32.5
53
63
128
50
40
pF VCB = -10V, f = 1MHz(*)
ns VCC = -15V,
ns IC = -750mA,
ns IB1 = IB2= -15mA
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ 2%.
Issue 1 - May 2006
© Zetex Semiconductors plc 2006
4
www.zetex.com
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ ZXTP25020BFH.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
ZXTP25020BFH | PNP medium power transistor | Zetex Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |