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PDF DIM375WKS06-S000 Data sheet ( Hoja de datos )
| Número de pieza | DIM375WKS06-S000 | |
| Descripción | IGBT Chopper Module | |
| Fabricantes | Dynex Semiconductor | |
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DIM375WKS06-S000
DIM375WKS06-S000
IGBT Chopper Module (Upper Arm Control)
FEATURES
I Low Forward Voltage Drop
I Isolated Copper Baseplate
APPLICATIONS
I Choppers
I Motor Controllers
DS5732-1.0 February 2004
KEY PARAMETERS
VCES
600V
VCE(sat)* (typ) 2.1V
I (max) 375A
C
IC(PK)
(max) 750A
*(measured at the power busbars and not the auxiliary terminals)
The Powerline range of modules includes half bridge,
chopper, bi-directional, dual and single switch configurations
covering voltages from 600V to 3300V and currents up to 3600A.
The DIM375WKS06-S000 is a 600V n channel enhancement
mode, insulated gate bipolar transistor (IGBT) chopper module
configured with the upper arm of the bridge controlled. The
module is suitable for a variety of medium voltage applications in
motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area
www.DataSheet4U.com
(RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm
drivesand ups systems..
ORDERING INFORMATION
Order as: DIM375WKS06-S000
Note: When ordering, use complete part number.
1(K,E)
2(A)
3(C1)
4(G1)
5(E1)
Fig. 1 Chopper circuit diagram
Outline type code: W
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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1 page  
DIM375WKS06-S000
TYPICAL CHARACTERISTICS
700
Common emitter
Tcase = 25˚C
600
Vce is measured at power
busbars and not the
auxiliary terminals
500
400
300
200
100
0
0
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
1 2.0 3
4
Collector-emitter voltage, Vce - (V)
5
Fig.3 Typical output characteristics
45
Conditions:
Tcase = 125ºC
40 Vcc = 300V
Rg = 4.7 ohms
35
30
25
20
15
10
5 Eon
Eoff
Erec
0
0 50 100 150 200 250 300 350 400
Collector current, IC - (A)
Fig.4 Typical switching energy vs collector current
700
Common emitter
Tcase = 125˚C
Vce is measured at power
600 busbars and not the
auxiliary terminals
500
400
300
200
100
0
0
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
1.0 2.0 3.0 4.0 5.0
Collector-emitter voltage, Vce - (V)
6.0
Fig.4 Typical output characteristics
60
Eoff
Eon
Erec
50
40
30
20
10
0
2 4 6 8 10 12 14 16
Gate resistance, Rg - (Ohms)
Fig.5 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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